IDT71V35761S183BQG8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: Ball Grid Array (BGA)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (4Mb)
• Organization: 256K words x 16 bits
• Operating Voltage: 1.8V
• Access Time: 18 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V35761S183BQG8 has a total of 119 pins. The pin configuration is as follows:

• Pin 1: VDDQ
• Pin 2: DQ0
• Pin 3: DQ1
• ...
• Pin 118: GND
• Pin 119: VDD

For the complete pin configuration, please refer to the datasheet provided by the manufacturer.

Functional Features

• High-speed operation: The IDT71V35761S183BQG8 offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: This memory device is designed to minimize power consumption, making it energy-efficient.
• Synchronous interface: The synchronous design allows for synchronized data transfers, ensuring reliable communication between the memory and the host system.
• Easy integration: The BGA package and compact size make it easy to integrate the IDT71V35761S183BQG8 into various electronic systems.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Low power consumption helps conserve energy.
• Synchronous interface ensures reliable communication.
• Compact size and BGA package facilitate easy integration.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Higher cost per bit compared to some alternative models.

Working Principles

The IDT71V35761S183BQG8 operates based on the principles of synchronous SRAM. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells are organized in a matrix structure, with each cell capable of storing one bit of data. The synchronous design allows for precise timing control, ensuring accurate data transfers between the memory and the host system.

Detailed Application Field Plans

The IDT71V35761S183BQG8 is commonly used in various applications, including:

1. Networking equipment: Used as cache memory in routers and switches to improve data processing speed.
2. Telecommunications systems: Enables fast data buffering and storage in communication devices.
3. Industrial automation: Provides quick access to critical data in control systems.
4. Automotive electronics: Used in advanced driver assistance systems (ADAS) and infotainment systems for efficient data handling.

Detailed and Complete Alternative Models

1. Micron MT45W4MW16BCGB-701 WT: Offers similar specifications and features as the IDT71V35761S183BQG8.
2. Samsung K6R4016V1D-UI10: Another synchronous SRAM with comparable characteristics.
3. Cypress CY7C1041DV33-10ZSXI: Provides high-speed operation and low power consumption, suitable as an alternative.

Please note that the above list is not exhaustive, and there may be other alternative models available in the market.

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