IDT71V35761S183BQG

Product Overview

Category

The IDT71V35761S183BQG belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Low power consumption
• Large storage capacity
• Reliable data retention
• Wide operating temperature range

Package

The IDT71V35761S183BQG is available in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture, dust, and physical damage.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The IDT71V35761S183BQG is typically packaged in trays or reels, with each package containing a specific quantity of integrated circuits. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 256K x 36
• Supply Voltage: 3.3V
• Access Time: 18ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 100
• Data Retention: Greater than 10 years

Detailed Pin Configuration

1. VDD - Power supply voltage
2. VSS - Ground
3. A0-A17 - Address inputs
4. DQ0-DQ35 - Data input/output pins
5. WE - Write enable
6. OE - Output enable
7. CE - Chip enable
8. UB/LB - Upper byte/lower byte control
9. CLK - Clock input
10. RAS - Row address strobe
11. CAS - Column address strobe

(Note: This is a simplified representation of the pin configuration. Please refer to the datasheet for the complete pinout details.)

Functional Features

• High-speed data access
• Simultaneous read and write operations
• Easy interfacing with other components
• Low power standby mode
• Built-in error detection and correction mechanisms

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Low power consumption
• Reliable data retention
• Wide operating temperature range
• Error detection and correction capabilities

Disadvantages

• Limited storage capacity compared to other memory technologies (e.g., NAND flash)
• Higher cost per bit compared to some alternative memory solutions

Working Principles

The IDT71V35761S183BQG operates based on the principles of static random access memory (SRAM). It stores digital information in a volatile manner, meaning that the data is lost when the power supply is disconnected. The memory cells within the IC are organized into rows and columns, allowing for efficient addressing and retrieval of data.

Detailed Application Field Plans

The IDT71V35761S183BQG finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

1. Micron MT45W8MW16BGX-701 WT
2. Samsung K4B2G1646E-BCK0
3. Cypress CY7C1049DV33-10ZSXI
4. Renesas R1LV0416DSB-5SI#B0
5. NXP P89LPC932A1FDH

(Note: These are just a few examples of alternative models available in the market. Please consult the manufacturers' datasheets for detailed specifications and compatibility with specific applications.)

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