IDT71V35761S166PFI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Large storage capacity
• Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
• Essence: Non-volatile memory
• Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4M words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years
• Package Dimensions: 13mm x 15mm

Pin Configuration

The IDT71V35761S166PFI8 has a total of 48 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. VSSQ
37. WE#
38. OE#
39. CE#
40. UB#
41. LB#
42. CLK
43. CLK#
44. ZZ#
45. ZZ
46. VDD
47. VSS
48. NC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient energy usage.
• Large storage capacity of 4M words x 16 bits provides ample memory space.
• Non-volatile memory retains data even when power is disconnected.

Advantages and Disadvantages

Advantages: - Fast access time improves overall system performance. - Low power consumption extends battery life in portable devices. - Large storage capacity accommodates complex applications. - Non-volatile memory preserves data integrity.

Disadvantages: - Relatively higher cost compared to other memory technologies. - Limited endurance compared to Flash memory. - Sensitive to environmental conditions such as temperature and voltage fluctuations.

Working Principles

The IDT71V35761S166PFI8 is a Static Random Access Memory (SRAM) device. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a matrix, with each cell storing one bit of data. The address lines control the selection of specific memory locations, while the data lines enable reading from or writing to those locations.

Detailed Application Field Plans

The IDT71V35761S166PFI8 is commonly used in various applications, including:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial automation
5. Automotive electronics
6. Medical instruments

Its high-speed operation and large storage capacity make it suitable for applications that require quick data access and ample memory space.

Detailed Alternative Models

1. IDT71V35761S166BFI8: Similar to IDT71V35761S166PFI8, but with a different package (Fine-Pitch Ball Grid Array).
2. IDT71V35761S166BG8: Similar to IDT71V35761S166PFI8, but with a different package (Ball Grid Array).
3. IDT71V35761S166PF8: Similar to IDT71V35761S166PFI8, but without the plastic packaging (bare die).

These alternative models offer similar functionality and can be chosen based on specific application requirements.

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