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IDT71V3558S133BG8
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics: High-speed, low-power, synchronous SRAM
- Package: BGA (Ball Grid Array)
- Essence: Provides fast and reliable data storage and retrieval capabilities
- Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements
Specifications
- Memory Type: Synchronous SRAM
- Density: 4 Megabits (4Mb)
- Organization: 512K words x 8 bits
- Operating Voltage: 3.3V
- Access Time: 133 MHz
- Interface: Parallel
- Operating Temperature Range: -40°C to +85°C
Detailed Pin Configuration
The IDT71V3558S133BG8 has a total of 119 pins. The pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- GND
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- A32
- A33
- A34
- A35
- A36
- A37
- A38
- A39
- A40
- A41
- A42
- A43
- A44
- A45
- A46
- A47
- A48
- A49
- A50
- A51
- A52
- A53
- A54
- A55
- A56
- A57
- A58
- A59
- A60
- A61
- A62
- A63
- A64
- A65
- A66
- A67
- A68
- A69
- A70
- A71
- A72
- A73
- A74
- A75
- A76
- A77
- A78
- A79
- A80
- A81
- A82
- A83
- A84
- A85
- A86
- A87
- A88
- A89
- A90
- A91
- A92
- A93
- A94
- A95
- A96
- A97
- A98
- A99
- A100
- A101
- A102
- A103
- A104
- A105
- A106
- A107
- VDDQ
Functional Features
- High-speed operation with a maximum access time of 133 MHz
- Low-power consumption for efficient energy usage
- Synchronous interface for synchronized data transfer
- Reliable data storage and retrieval capabilities
- Easy integration into various electronic systems
Advantages and Disadvantages
Advantages: - High-speed operation allows for quick data access - Low-power consumption helps in reducing overall energy usage - Synchronous interface ensures reliable data transfer - Compact BGA package offers space-saving benefits
Disadvantages: - Limited memory capacity compared to other memory devices - Higher cost compared to some alternative models - Requires careful handling due to the delicate nature of BGA packaging
Working Principles
The IDT71V3558S133BG8 is a synchronous SRAM that operates based on the synchronous interface principle. It uses an internal clock signal to synchronize data transfers between the memory device and the connected system
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V3558S133BG8 v technických řešeních
Sure! Here are 10 common questions and answers related to the application of IDT71V3558S133BG8 in technical solutions:
Question: What is the IDT71V3558S133BG8?
Answer: The IDT71V3558S133BG8 is a synchronous SRAM (Static Random Access Memory) chip manufactured by Integrated Device Technology (IDT).Question: What is the capacity of the IDT71V3558S133BG8?
Answer: The IDT71V3558S133BG8 has a capacity of 4 Megabits (512K x 8 bits).Question: What is the operating voltage range for the IDT71V3558S133BG8?
Answer: The IDT71V3558S133BG8 operates within a voltage range of 3.0V to 3.6V.Question: What is the access time of the IDT71V3558S133BG8?
Answer: The IDT71V3558S133BG8 has an access time of 13.5 ns.Question: Can the IDT71V3558S133BG8 be used in battery-powered devices?
Answer: Yes, the IDT71V3558S133BG8 can be used in battery-powered devices as it operates within a low voltage range.Question: Does the IDT71V3558S133BG8 support burst mode operation?
Answer: No, the IDT71V3558S133BG8 does not support burst mode operation. It is a synchronous SRAM with asynchronous inputs.Question: What is the package type of the IDT71V3558S133BG8?
Answer: The IDT71V3558S133BG8 is available in a 32-pin TSOP (Thin Small Outline Package).Question: Can the IDT71V3558S133BG8 be used in industrial applications?
Answer: Yes, the IDT71V3558S133BG8 is suitable for industrial applications as it operates within an extended temperature range of -40°C to +85°C.Question: Does the IDT71V3558S133BG8 have any built-in error correction capabilities?
Answer: No, the IDT71V3558S133BG8 does not have built-in error correction capabilities. It is a standard synchronous SRAM.Question: Can multiple IDT71V3558S133BG8 chips be cascaded together?
Answer: Yes, multiple IDT71V3558S133BG8 chips can be cascaded together to increase the overall memory capacity in a system.
Please note that these answers are based on general information about the IDT71V3558S133BG8 and may vary depending on specific application requirements.