Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
IDT71V3558S100PFI8

IDT71V3558S100PFI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 100-pin plastic quad flat pack (PQFP)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Sold individually in a single package

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 512K x 36 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: 10 years
  • Package Dimensions: 14mm x 20mm

Pin Configuration

The IDT71V3558S100PFI8 has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. VSSQ
  35. VDDQ
  36. /WE#
  37. /OE#
  38. A0
  39. A1
  40. A2
  41. A3
  42. A4
  43. A5
  44. A6
  45. A7
  46. A8
  47. A9
  48. A10
  49. A11
  50. A12
  51. A13
  52. A14
  53. A15
  54. A16
  55. A17
  56. A18
  57. A19
  58. A20
  59. A21
  60. A22
  61. A23
  62. A24
  63. A25
  64. A26
  65. A27
  66. A28
  67. A29
  68. A30
  69. A31
  70. VSS
  71. VDD
  72. CLK
  73. /CS#
  74. /RAS#
  75. /CAS#
  76. /WEN#
  77. /OEN#
  78. /LB#
  79. /UB#
  80. /CE#
  81. /ZZ#
  82. ZZ
  83. ZZ
  84. ZZ
  85. ZZ
  86. ZZ
  87. ZZ
  88. ZZ
  89. ZZ
  90. ZZ
  91. ZZ
  92. ZZ
  93. ZZ
  94. ZZ
  95. ZZ
  96. ZZ
  97. ZZ
  98. ZZ
  99. ZZ
  100. VSS

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption ensures efficient energy usage.
  • Synchronous design enables synchronized data transfers.
  • Reliable performance with a long data retention period.
  • Wide operating temperature range for versatile applications.

Advantages and Disadvantages

Advantages: - Fast access time improves overall system performance. - Low power consumption reduces energy costs. - Synchronous design simplifies system integration. - Reliable data storage with a long retention period.

Disadvantages: - Limited memory capacity compared to other storage devices. - Higher cost per bit compared to alternative memory technologies.

Working Principles

The IDT71V3558S100PFI8 operates as a synchronous SRAM, utilizing a clock signal to synchronize data transfers. When the chip select (/CS#) and read enable (/OE#) signals are active, the device allows data to be read from the memory array. Similarly, when the write enable (/WE#) signal is active, data can be written into the memory array. The address lines (A0-A31) specify the location of the data to be accessed.

Detailed Application Field Plans

The IDT71V3558S100PFI8 is commonly used in various applications that require high-speed and reliable data storage. Some of the

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V3558S100PFI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V3558S100PFI8 in technical solutions:

  1. Q: What is IDT71V3558S100PFI8? A: IDT71V3558S100PFI8 is a synchronous SRAM (Static Random Access Memory) chip manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V3558S100PFI8? A: IDT71V3558S100PFI8 has a capacity of 4 Megabits (512K x 8 bits).

  3. Q: What is the operating voltage range for IDT71V3558S100PFI8? A: The operating voltage range for IDT71V3558S100PFI8 is typically between 3.0V and 3.6V.

  4. Q: What is the access time of IDT71V3558S100PFI8? A: The access time of IDT71V3558S100PFI8 is 10 ns, which means it takes approximately 10 nanoseconds to read or write data.

  5. Q: Can IDT71V3558S100PFI8 be used in battery-powered devices? A: Yes, IDT71V3558S100PFI8 can be used in battery-powered devices as it operates within the typical voltage range of such devices.

  6. Q: Is IDT71V3558S100PFI8 compatible with other memory chips? A: Yes, IDT71V3558S100PFI8 is compatible with other standard SRAM chips that have similar specifications.

  7. Q: What is the package type of IDT71V3558S100PFI8? A: IDT71V3558S100PFI8 comes in a 32-pin plastic leaded chip carrier (PLCC) package.

  8. Q: Can IDT71V3558S100PFI8 be used in high-speed applications? A: Yes, IDT71V3558S100PFI8 can be used in high-speed applications as it has a relatively fast access time of 10 ns.

  9. Q: Does IDT71V3558S100PFI8 support simultaneous read and write operations? A: No, IDT71V3558S100PFI8 does not support simultaneous read and write operations. It is a synchronous memory chip that operates on a clock signal.

  10. Q: What are some typical applications of IDT71V3558S100PFI8? A: IDT71V3558S100PFI8 is commonly used in networking equipment, telecommunications devices, industrial control systems, and other embedded systems where fast and reliable data storage is required.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.