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IDT71V3558S100BQ

IDT71V3558S100BQ

Product Overview

Category

The IDT71V3558S100BQ belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This product is primarily used as a high-speed memory component in various electronic devices and systems.

Characteristics

  • High-speed operation
  • Non-volatile storage
  • Low power consumption
  • Large storage capacity
  • Reliable data retention

Package

The IDT71V3558S100BQ is available in a compact Ball Grid Array (BGA) package.

Essence

This SRAM chip serves as a crucial component for storing and retrieving data quickly and efficiently in electronic devices.

Packaging/Quantity

The IDT71V3558S100BQ is typically packaged in reels or trays, with varying quantities depending on customer requirements.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 512K x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Data Retention: More than 10 years
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: Ball Grid Array (BGA)
  • Pin Count: 100 pins

Detailed Pin Configuration

The IDT71V3558S100BQ has a total of 100 pins, each serving a specific function. The detailed pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. GND
  11. DQ0
  12. DQ1
  13. DQ2
  14. DQ3
  15. DQ4
  16. DQ5
  17. DQ6
  18. DQ7
  19. WE#
  20. OE#
  21. CE1#
  22. CE2#
  23. CE3#
  24. CE4#
  25. CE5#
  26. CE6#
  27. CE7#
  28. CE8#
  29. CE9#
  30. CE10#
  31. CE11#
  32. CE12#
  33. CE13#
  34. CE14#
  35. CE15#
  36. CE16#
  37. CE17#
  38. CE18#
  39. CE19#
  40. CE20#
  41. CE21#
  42. CE22#
  43. CE23#
  44. CE24#
  45. CE25#
  46. CE26#
  47. CE27#
  48. CE28#
  49. CE29#
  50. CE30#
  51. CE31#
  52. CE32#
  53. CE33#
  54. CE34#
  55. CE35#
  56. CE36#
  57. CE37#
  58. CE38#
  59. CE39#
  60. CE40#
  61. CE41#
  62. CE42#
  63. CE43#
  64. CE44#
  65. CE45#
  66. CE46#
  67. CE47#
  68. CE48#
  69. CE49#
  70. CE50#
  71. CE51#
  72. CE52#
  73. CE53#
  74. CE54#
  75. CE55#
  76. CE56#
  77. CE57#
  78. CE58#
  79. CE59#
  80. CE60#
  81. CE61#
  82. CE62#
  83. CE63#
  84. CE64#
  85. CE65#
  86. CE66#
  87. CE67#
  88. CE68#
  89. CE69#
  90. CE70#
  91. CE71#
  92. CE72#
  93. CE73#
  94. CE74#
  95. CE75#
  96. CE76#
  97. CE77#
  98. CE78#
  99. CE79#
  100. GND

Functional Features

  • High-speed data access and retrieval
  • Non-volatile storage ensures data retention even during power loss
  • Low power consumption for energy-efficient operation
  • Large storage capacity allows for storing a significant amount of data
  • Reliable performance and durability

Advantages and Disadvantages

Advantages

  • Fast data access and retrieval
  • Low power consumption
  • Large storage capacity
  • Reliable data retention

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited scalability in terms of storage capacity

Working Principles

The IDT71V3558S100BQ operates based on the principles of static random access memory. It utilizes flip-flops to store and retrieve data, allowing for fast and efficient access times. The non-volatile nature of this SRAM chip ensures that data remains intact even when power is lost.

Detailed Application Field Plans

The IDT71V355

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V3558S100BQ v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V3558S100BQ in technical solutions:

  1. Question: What is IDT71V3558S100BQ?
    Answer: IDT71V3558S100BQ is a specific model of synchronous SRAM (Static Random Access Memory) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71V3558S100BQ?
    Answer: The IDT71V3558S100BQ has a capacity of 4 Megabits (512K x 8 bits).

  3. Question: What is the operating voltage range for IDT71V3558S100BQ?
    Answer: The operating voltage range for IDT71V3558S100BQ is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71V3558S100BQ?
    Answer: The access time of IDT71V3558S100BQ is 10 ns, which means it takes approximately 10 nanoseconds to read or write data.

  5. Question: Can IDT71V3558S100BQ be used in battery-powered devices?
    Answer: Yes, IDT71V3558S100BQ can be used in battery-powered devices as it operates within the typical voltage range of such devices.

  6. Question: Is IDT71V3558S100BQ compatible with other memory interfaces?
    Answer: Yes, IDT71V3558S100BQ is compatible with industry-standard memory interfaces like asynchronous SRAM and parallel NOR flash.

  7. Question: What are some typical applications of IDT71V3558S100BQ?
    Answer: IDT71V3558S100BQ is commonly used in networking equipment, telecommunications systems, industrial automation, and embedded systems.

  8. Question: Can IDT71V3558S100BQ be used as a cache memory?
    Answer: Yes, IDT71V3558S100BQ can be used as a cache memory due to its fast access time and high-speed operation.

  9. Question: Does IDT71V3558S100BQ support burst mode operations?
    Answer: No, IDT71V3558S100BQ does not support burst mode operations. It operates in a synchronous mode.

  10. Question: What is the temperature range for IDT71V3558S100BQ?
    Answer: The temperature range for IDT71V3558S100BQ is typically between -40°C and +85°C, making it suitable for various environments.

Please note that these answers are general and may vary depending on specific application requirements and datasheet specifications.