IDT71V3558S100BG8

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics:
- High-speed synchronous static random-access memory (SRAM)
- Low power consumption
- Large storage capacity
Package: BG8 package
Essence: Provides fast and reliable data storage and retrieval capabilities
Packaging/Quantity: Available in bulk packaging, quantity varies based on customer requirements

Specifications

Model: IDT71V3558S100BG8
Technology: Synchronous SRAM
Organization: 512K x 36 bits
Operating Voltage: 3.3V
Access Time: 10 ns
Operating Temperature Range: -40°C to +85°C
Data Retention: Greater than 20 years
Package Type: 119-ball BGA (Ball Grid Array)

Detailed Pin Configuration

The IDT71V3558S100BG8 has a total of 119 pins. The pin configuration is as follows:

VDDQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
VSSQ
VDD
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
A64
A65
A66
A67
A68
A69
A70
A71
A72
A73
A74
A75
A76
A77
A78
A79
VSS
WE#
OE#
CLK

Functional Features

High-speed operation allows for quick data access and retrieval.
Synchronous design ensures reliable and synchronized data transfers.
Low power consumption makes it suitable for battery-powered devices.
Large storage capacity of 512K x 36 bits provides ample memory space.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Synchronous operation ensures reliable data transfers. - Low power consumption extends battery life in portable devices. - Large storage capacity accommodates extensive data requirements.

Disadvantages: - Higher cost compared to other memory technologies. - Limited compatibility with certain systems due to specific pin configuration. - Requires careful handling and proper ESD precautions during installation.

Working Principles

The IDT71V3558S100

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V3558S100BG8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V3558S100BG8 in technical solutions:

Q: What is IDT71V3558S100BG8? A: IDT71V3558S100BG8 is a synchronous SRAM (Static Random Access Memory) chip manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V3558S100BG8? A: IDT71V3558S100BG8 has a capacity of 4 Megabits (512K x 8 bits).
Q: What is the operating voltage range for IDT71V3558S100BG8? A: The operating voltage range for IDT71V3558S100BG8 is typically between 3.0V and 3.6V.
Q: What is the access time of IDT71V3558S100BG8? A: The access time of IDT71V3558S100BG8 is 10 ns (nanoseconds).
Q: Can IDT71V3558S100BG8 be used in battery-powered devices? A: Yes, IDT71V3558S100BG8 can be used in battery-powered devices as it operates within a low voltage range.
Q: Is IDT71V3558S100BG8 compatible with standard microcontrollers? A: Yes, IDT71V3558S100BG8 is compatible with standard microcontrollers that support asynchronous SRAM interfaces.
Q: Does IDT71V3558S100BG8 support burst mode operation? A: No, IDT71V3558S100BG8 does not support burst mode operation. It is a synchronous SRAM.
Q: Can IDT71V3558S100BG8 be used in industrial applications? A: Yes, IDT71V3558S100BG8 can be used in industrial applications as it has a wide operating temperature range and is designed for reliability.
Q: What is the package type of IDT71V3558S100BG8? A: IDT71V3558S100BG8 comes in a 32-pin plastic TSOP (Thin Small Outline Package).
Q: Are there any special considerations for PCB layout when using IDT71V3558S100BG8? A: Yes, it is recommended to follow the layout guidelines provided in the datasheet to ensure proper signal integrity and minimize noise.

Please note that these answers are general and may vary depending on specific application requirements.