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IDT71V3557SA80BGI8

IDT71V3557SA80BGI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed performance
    • Large storage capacity
    • Low power consumption
  • Package: BGA (Ball Grid Array)
  • Essence: Non-volatile memory
  • Packaging/Quantity: Single unit

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K x 36
  • Operating Voltage: 3.3V
  • Access Time: 8 ns
  • Operating Temperature: -40°C to +85°C
  • Data Retention: 10 years
  • Interface: Parallel

Detailed Pin Configuration

The IDT71V3557SA80BGI8 has a total of 119 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. VSSQ
  35. A0
  36. A1
  37. A2
  38. A3
  39. A4
  40. A5
  41. A6
  42. A7
  43. A8
  44. A9
  45. A10
  46. A11
  47. A12
  48. A13
  49. A14
  50. A15
  51. A16
  52. A17
  53. A18
  54. A19
  55. A20
  56. A21
  57. A22
  58. A23
  59. A24
  60. A25
  61. A26
  62. A27
  63. A28
  64. A29
  65. A30
  66. A31
  67. CE1#
  68. CE2#
  69. WE#
  70. OE#
  71. UB#
  72. LB#
  73. ZZ#
  74. ZZ#
  75. ZZ#
  76. ZZ#
  77. ZZ#
  78. ZZ#
  79. ZZ#
  80. ZZ#
  81. ZZ#
  82. ZZ#
  83. ZZ#
  84. ZZ#
  85. ZZ#
  86. ZZ#
  87. ZZ#
  88. ZZ#
  89. ZZ#
  90. ZZ#
  91. ZZ#
  92. ZZ#
  93. ZZ#
  94. ZZ#
  95. ZZ#
  96. ZZ#
  97. ZZ#
  98. ZZ#
  99. ZZ#
  100. ZZ#
  101. ZZ#
  102. ZZ#
  103. ZZ#
  104. ZZ#
  105. ZZ#
  106. ZZ#
  107. ZZ#
  108. ZZ#
  109. ZZ#
  110. ZZ#
  111. ZZ#
  112. ZZ#
  113. ZZ#
  114. ZZ#
  115. ZZ#
  116. ZZ#
  117. ZZ#
  118. ZZ#
  119. VDDQ

Functional Features

  • High-speed access and data transfer
  • Non-volatile memory retains data even when power is lost
  • Low power consumption for energy efficiency
  • Wide operating temperature range for versatility
  • Parallel interface for easy integration with other components

Advantages and Disadvantages

Advantages: - Fast access time allows for quick data retrieval - Large storage capacity accommodates a significant amount of data - Low power consumption reduces energy usage and extends battery life - Non-volatile memory ensures data retention even during power outages - Wide operating temperature range enables usage in various environments

Disadvantages: - Higher cost compared to other memory technologies - Limited scalability in terms of storage capacity - Relatively larger physical size due to the BGA package

Working Principles

The IDT71V3557SA80BGI8 is a static random access memory (SRAM) device. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized in a 256K x 36 configuration, allowing for efficient

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V3557SA80BGI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V3557SA80BGI8 in technical solutions:

  1. Question: What is IDT71V3557SA80BGI8?
    Answer: IDT71V3557SA80BGI8 is a specific model of synchronous SRAM (Static Random Access Memory) chip manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71V3557SA80BGI8?
    Answer: The IDT71V3557SA80BGI8 has a capacity of 4 Megabits (512K x 8 bits).

  3. Question: What is the operating voltage range for IDT71V3557SA80BGI8?
    Answer: The operating voltage range for IDT71V3557SA80BGI8 is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71V3557SA80BGI8?
    Answer: The access time of IDT71V3557SA80BGI8 is 8 nanoseconds (ns).

  5. Question: Can IDT71V3557SA80BGI8 be used in industrial applications?
    Answer: Yes, IDT71V3557SA80BGI8 is suitable for use in industrial applications due to its wide operating temperature range (-40°C to +85°C).

  6. Question: Does IDT71V3557SA80BGI8 support multiple read and write operations simultaneously?
    Answer: No, IDT71V3557SA80BGI8 does not support multiple read and write operations simultaneously. It operates in a single read or write mode at a time.

  7. Question: What is the package type of IDT71V3557SA80BGI8?
    Answer: IDT71V3557SA80BGI8 comes in a 119-ball BGA (Ball Grid Array) package.

  8. Question: Can IDT71V3557SA80BGI8 be used as a cache memory in computer systems?
    Answer: Yes, IDT71V3557SA80BGI8 can be used as a cache memory due to its fast access time and high-speed operation.

  9. Question: Is IDT71V3557SA80BGI8 compatible with other SRAM chips from different manufacturers?
    Answer: Yes, IDT71V3557SA80BGI8 follows industry-standard pinout and timing specifications, making it compatible with other SRAM chips from different manufacturers.

  10. Question: What are some typical applications of IDT71V3557SA80BGI8?
    Answer: Some typical applications of IDT71V3557SA80BGI8 include networking equipment, telecommunications systems, industrial automation, and embedded systems where fast and reliable memory access is required.

Please note that these answers are general and may vary depending on specific requirements and use cases.