IDT71V3556S166PF

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 166-pin plastic quad flat pack (PQFP)
• Essence: Provides high-performance memory storage for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (4M x 16)
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Interface: Parallel
• Clock Frequency: 166 MHz
• Organization: 4 banks of 1M x 16
• Power Supply Current: 100 mA (typical)

Pin Configuration

The IDT71V3556S166PF has a total of 166 pins. The pin configuration is as follows:

• Pins 1-8: Address Inputs (A0-A7)
• Pins 9-16: Address Inputs (A8-A15)
• Pins 17-24: Address Inputs (A16-A23)
• Pins 25-32: Address Inputs (A24-A31)
• Pins 33-40: Data Inputs/Outputs (DQ0-DQ7)
• Pins 41-48: Data Inputs/Outputs (DQ8-DQ15)
• Pins 49-56: Data Inputs/Outputs (DQ16-DQ23)
• Pins 57-64: Data Inputs/Outputs (DQ24-DQ31)
• Pins 65-72: Chip Enable (CE0-CE3)
• Pins 73-80: Output Enable (OE0-OE3)
• Pins 81-88: Write Enable (WE0-WE3)
• Pins 89-96: Byte Enable (BE0-BE3)
• Pins 97-104: Clock Input (CLK)
• Pins 105-112: Clock Enable (CKE0-CKE3)
• Pins 113-120: Address Strobe (ADS0-ADS3)
• Pins 121-128: Burst Address Inputs (BA0-BA3)
• Pins 129-136: Burst Address Inputs (BA4-BA7)
• Pins 137-144: Burst Address Inputs (BA8-BA11)
• Pins 145-152: Burst Address Inputs (BA12-BA15)
• Pins 153-160: Burst Address Inputs (BA16-BA19)
• Pins 161-166: Ground and Power Supply

Functional Features

• High-speed operation with a clock frequency of up to 166 MHz
• Low-power consumption for efficient energy usage
• Synchronous interface allows for precise timing control
• Four banks of memory organization provide flexibility in data storage
• Supports burst mode for faster data transfer
• Automatic power-down mode for reduced power consumption during idle periods

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data access - Low-power consumption helps prolong battery life in portable devices - Synchronous interface ensures reliable data transfer - Multiple banks allow for efficient memory management - Burst mode enhances overall system performance

Disadvantages: - Limited memory capacity compared to other storage technologies - Relatively higher cost per unit compared to non-volatile memory options - Requires external clock signal for proper operation

Working Principles

The IDT71V3556S166PF is a synchronous SRAM that stores data in a volatile manner. It operates by receiving address inputs, data inputs/outputs, and control signals from the host system. The memory cells within the IC store binary data in a digital format using electronic switches. When the appropriate address is provided, the stored data can be accessed and retrieved.

Detailed Application Field Plans

The IDT71V3556S166PF is commonly used in various applications that require high-speed and low-power memory storage. Some of the typical application fields include:

1. Telecommunications: Used in networking equipment, routers, and switches for buffering and caching purposes.
2. Consumer Electronics: Integrated into gaming consoles, set-top boxes, and digital cameras to store temporary data and program code.
3. Automotive Systems: Employed in automotive infotainment systems, navigation units, and advanced driver-assistance systems (ADAS) for fast data access.
4. Industrial Automation: Utilized in programmable logic controllers (PLCs), robotics, and factory automation systems for efficient data handling.
5. Medical Devices: Integrated into medical imaging equipment