IDT71V2559S80BG8

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
Package: Ball Grid Array (BGA)
Essence: Provides fast and reliable data storage and retrieval capabilities
Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

Memory Type: Synchronous SRAM
Memory Size: 256K x 36 bits
Operating Voltage: 3.3V
Access Time: 8 ns
Operating Temperature Range: -40°C to +85°C
Pin Count: 119 pins
Data Retention: More than 10 years

Detailed Pin Configuration

The IDT71V2559S80BG8 has a total of 119 pins. The pin configuration is as follows:

VDDQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
VSSQ
NC
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
A64
A65
A66
A67
A68
A69
A70
A71
VSS
CLK
CKE
CS#
WE#
OE#
UB#
LB#
VDD
VSS
NC
VDDQ

Functional Features

High-speed operation: The IDT71V2559S80BG8 offers fast access times, making it suitable for applications that require quick data retrieval.
Low-power consumption: This SRAM device is designed to minimize power consumption, making it ideal for battery-powered devices or energy-efficient systems.
Synchronous interface: The synchronous design ensures reliable and synchronized data transfers between the memory and the host system.
Easy integration: The BGA package allows for easy integration into circuit boards, providing a compact and space-saving solution.

Advantages and Disadvantages

Advantages: - Fast access times enable efficient data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous interface ensures reliable data transfers. - Compact BGA package allows for easy integration.

Disadvantages:

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V2559S80BG8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V2559S80BG8 in technical solutions:

Q: What is the IDT71V2559S80BG8? A: The IDT71V2559S80BG8 is a high-speed, low-power CMOS synchronous static RAM (SRAM) with a capacity of 256K x 36 bits.
Q: What are the key features of the IDT71V2559S80BG8? A: Some key features include a synchronous interface, fast access times, low power consumption, and a wide operating voltage range.
Q: What is the typical application of the IDT71V2559S80BG8? A: This SRAM is commonly used in networking equipment, telecommunications systems, industrial automation, and other applications that require high-speed data storage.
Q: What is the operating voltage range of the IDT71V2559S80BG8? A: The IDT71V2559S80BG8 operates within a voltage range of 3.0V to 3.6V.
Q: What is the maximum clock frequency supported by the IDT71V2559S80BG8? A: The IDT71V2559S80BG8 supports a maximum clock frequency of 80 MHz.
Q: Does the IDT71V2559S80BG8 support multiple chip enable inputs? A: Yes, this SRAM supports two chip enable inputs (CE1 and CE2) for easy interfacing with other devices.
Q: Can I use the IDT71V2559S80BG8 in battery-powered devices? A: Yes, the IDT71V2559S80BG8 has low power consumption, making it suitable for battery-powered applications.
Q: What is the data retention capability of the IDT71V2559S80BG8? A: The IDT71V2559S80BG8 has a data retention capability of 10 years.
Q: Does the IDT71V2559S80BG8 support burst mode operation? A: Yes, this SRAM supports burst mode operation, allowing for efficient data transfer.
Q: Can I use the IDT71V2559S80BG8 in temperature-sensitive environments? A: Yes, the IDT71V2559S80BG8 has an extended temperature range of -40°C to +85°C, making it suitable for various environments.

Please note that these answers are general and may vary depending on specific application requirements.