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IDT71V2559S75PF8

IDT71V2559S75PF8

Product Overview

Category

The IDT71V2559S75PF8 belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This product is primarily used as a high-speed memory device in various electronic systems and applications.

Characteristics

  • High-speed operation
  • Non-volatile storage
  • Low power consumption
  • Large storage capacity
  • Reliable performance

Package

The IDT71V2559S75PF8 is available in a small form factor package, which ensures easy integration into electronic circuit boards.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval capabilities for electronic devices.

Packaging/Quantity

The IDT71V2559S75PF8 is typically packaged in reels or trays, with each package containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K x 36 bits
  • Operating Voltage: 3.3V
  • Access Time: 7.5 ns
  • Standby Current: <10 µA
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: 100-pin TQFP

Detailed Pin Configuration

The IDT71V2559S75PF8 has a total of 100 pins, each serving a specific function within the chip. The detailed pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. GND
  35. VDD
  36. A0
  37. A1
  38. A2
  39. A3
  40. A4
  41. A5
  42. A6
  43. A7
  44. A8
  45. A9
  46. A10
  47. A11
  48. A12
  49. A13
  50. A14
  51. A15
  52. A16
  53. A17
  54. A18
  55. A19
  56. A20
  57. A21
  58. A22
  59. A23
  60. A24
  61. A25
  62. A26
  63. A27
  64. A28
  65. A29
  66. A30
  67. A31
  68. CE1#
  69. CE2#
  70. WE#
  71. OE#
  72. UB#
  73. LB#
  74. ZZ#
  75. ZZ#
  76. ZZ#
  77. ZZ#
  78. ZZ#
  79. ZZ#
  80. ZZ#
  81. ZZ#
  82. ZZ#
  83. ZZ#
  84. ZZ#
  85. ZZ#
  86. ZZ#
  87. ZZ#
  88. ZZ#
  89. ZZ#
  90. ZZ#
  91. ZZ#
  92. ZZ#
  93. ZZ#
  94. ZZ#
  95. ZZ#
  96. ZZ#
  97. ZZ#
  98. ZZ#
  99. ZZ#
  100. VSSQ

Functional Features

  • High-speed data access and retrieval
  • Non-volatile storage capability
  • Low power consumption during standby mode
  • Easy integration into electronic systems
  • Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

  • Fast operation speed
  • Large storage capacity
  • Low power consumption
  • Reliable performance
  • Easy integration into electronic systems

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited scalability beyond the specified storage capacity

Working Principles

The IDT71V2559S75PF8 operates based on the principles of static random access memory. It utilizes a combination of flip-flops and logic gates to store and retrieve data. When powered, the chip maintains the stored data without requiring constant refreshing, making it suitable for high-speed applications.

Detailed Application Field Plans

The

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V2559S75PF8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V2559S75PF8 in technical solutions:

  1. Q: What is the IDT71V2559S75PF8? A: The IDT71V2559S75PF8 is a high-speed, low-power CMOS static RAM (SRAM) device with a capacity of 4 Meg x 16 bits.

  2. Q: What are the key features of the IDT71V2559S75PF8? A: Some key features include a fast access time of 7.5 ns, low power consumption, wide operating voltage range, and industrial temperature range.

  3. Q: What are some typical applications for the IDT71V2559S75PF8? A: The IDT71V2559S75PF8 is commonly used in networking equipment, telecommunications systems, data storage devices, and other high-performance computing applications.

  4. Q: Can the IDT71V2559S75PF8 be used in battery-powered devices? A: Yes, the IDT71V2559S75PF8 has a low power consumption design, making it suitable for use in battery-powered devices where power efficiency is crucial.

  5. Q: What is the maximum operating frequency of the IDT71V2559S75PF8? A: The IDT71V2559S75PF8 can operate at a maximum frequency of 133 MHz, allowing for high-speed data processing.

  6. Q: Does the IDT71V2559S75PF8 support multiple read and write operations simultaneously? A: Yes, the IDT71V2559S75PF8 supports simultaneous read and write operations, enabling efficient data transfer in multi-tasking environments.

  7. Q: Can the IDT71V2559S75PF8 be used in harsh environments? A: Yes, the IDT71V2559S75PF8 is designed to operate in an industrial temperature range of -40°C to +85°C, making it suitable for use in harsh environments.

  8. Q: What is the voltage supply range for the IDT71V2559S75PF8? A: The IDT71V2559S75PF8 operates with a voltage supply range of 3.0V to 3.6V, providing flexibility in various system designs.

  9. Q: Does the IDT71V2559S75PF8 have any built-in error correction capabilities? A: No, the IDT71V2559S75PF8 does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

  10. Q: Are there any specific design considerations when using the IDT71V2559S75PF8? A: Some design considerations include proper decoupling capacitor placement, signal integrity management, and adherence to recommended operating conditions outlined in the datasheet.

Please note that these answers are general and may vary depending on the specific requirements and implementation of the IDT71V2559S75PF8 in a technical solution.