IDT71V2559S75BG8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Large storage capacity
  • Low power consumption
• Package: BG8 package
• Essence: Non-volatile memory
• Packaging/Quantity: Individual units

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Density: 256Kb (32K x 8)
• Operating Voltage: 3.3V
• Access Time: 7.5 ns
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Pin Count: 36

Detailed Pin Configuration

The IDT71V2559S75BG8 has a total of 36 pins, each serving a specific purpose. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. CE#
20. WE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. GND
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC

Functional Features

• High-speed access and data transfer
• Non-volatile memory retains data even when power is lost
• Low power consumption for energy efficiency
• Easy integration into various electronic systems
• Reliable performance in extreme temperature conditions

Advantages and Disadvantages

Advantages: - Fast access time allows for quick data retrieval - Large storage capacity accommodates a wide range of applications - Low power consumption helps prolong battery life in portable devices - Reliable performance in harsh environments ensures data integrity

Disadvantages: - Higher cost compared to other memory technologies - Limited write endurance compared to some non-volatile memory types - Requires continuous power supply to retain data

Working Principles

The IDT71V2559S75BG8 is based on Static Random Access Memory (SRAM) technology. It stores data using flip-flops, which are stable circuits that can hold information as long as power is supplied. The memory cells are organized in a matrix of rows and columns, allowing for efficient read and write operations.

When a specific memory location is addressed, the corresponding row and column are activated, enabling data to be read from or written to that location. The access time of 7.5 ns indicates the speed at which data can be retrieved or stored.

Detailed Application Field Plans

The IDT71V2559S75BG8 is widely used in various electronic systems that require high-speed and reliable data storage. Some common application fields include:

1. Computer Systems:

   • Cache memory
   • Buffer memory
   • System memory

2. Communication Equipment:

   • Routers
   • Switches
   • Network cards

3. Industrial Control Systems:

   • Programmable Logic Controllers (PLCs)
   • Data acquisition systems
   • Robotics

4. Automotive Electronics:

   • Engine control units
   • Infotainment systems
   • Advanced driver-assistance systems (ADAS)

Detailed and Complete Alternative Models

1. IDT71V2556S75BG8: Similar to IDT71V2559S75BG8, but with a density of 128Kb (16K x 8).
2. IDT71V2557S75BG8: Similar to IDT71V2559S75BG8, but with a density of 512Kb (64K x 8).
3. IDT71V2558S75BG8: Similar to IDT71V2559S75BG8, but with a density of 1Mb (128K x 8).

These alternative models offer different storage capacities to suit specific application requirements.

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