IDT71V2558S200PF

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous SRAM
• Package: 200-pin plastic quad flat pack (PQFP)
• Essence: Provides high-performance memory storage for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous Static Random Access Memory (SRAM)
• Density: 32 Megabits (4 Megabytes)
• Organization: 2,097,152 words x 16 bits
• Operating Voltage: 3.3V ± 0.3V
• Access Time: 10 ns (max)
• Clock Frequency: 100 MHz (max)
• Standby Current: 5 mA (typical)
• Operating Temperature: -40°C to +85°C

Pin Configuration

The IDT71V2558S200PF has a total of 200 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. A16
35. A17
36. A18
37. A19
38. A20
39. A21
40. A22
41. A23
42. A24
43. A25
44. A26
45. A27
46. A28
47. A29
48. A30
49. A31
50. GND

(Note: The pin configuration continues up to pin 200)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption ensures efficient energy usage.
• Synchronous design enables synchronized communication with other components.
• Reliable performance in various operating conditions.
• Easy integration into electronic devices due to standard package and pin configuration.

Advantages and Disadvantages

Advantages: - High-speed operation improves overall system performance. - Low-power consumption extends battery life in portable devices. - Synchronous design simplifies system timing requirements. - Reliable performance ensures data integrity. - Standard package and pin configuration facilitate easy integration.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per unit compared to some alternative memory options. - Requires external clock signal for synchronous operation.

Working Principles

The IDT71V2558S200PF is a synchronous SRAM that stores digital information using flip-flops. It operates based on the principle of static random access memory, where data is stored as long as power is supplied. The synchronous design ensures that data is read and written in synchronization with an external clock signal. This allows for efficient and reliable communication between the memory device and other components in the system.

Detailed Application Field Plans

The IDT71V2558S200PF is commonly used in various electronic devices that require high-speed and low-power memory storage. Some of the application fields where this product finds utility include:

1. Networking equipment: Routers, switches, and network interface cards.
2. Telecommunications systems: Base stations, voice/data communication devices.
3. Industrial automation: Programmable logic controllers (PLCs), robotics.
4. Consumer electronics: Set-top boxes, gaming consoles, digital cameras.
5. Automotive electronics: Infotainment systems, advanced driver-assistance systems (ADAS).
6. Medical devices: Patient monitoring systems, diagnostic equipment.

Detailed and Complete Alternative Models

1. IDT71V3557S85BGI: 32 Megabit (4 Megabyte) synchronous SRAM with an operating voltage of 3.3V. Available in a 119-ball BGA package.
2. Cypress CY62157EV30LL-45ZSXI: 32 Megabit (4 Megabyte) synchronous SRAM with an operating voltage of 3.0V. Available in a 48-pin TSOP package.