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IDT71V2558S133PF
Product Overview
Category
The IDT71V2558S133PF belongs to the category of integrated circuits (ICs).
Use
This product is commonly used in electronic devices for memory storage and retrieval purposes.
Characteristics
- High-speed performance
- Low power consumption
- Large storage capacity
- Reliable data retention
- Easy integration into circuit designs
Package
The IDT71V2558S133PF is available in a small form factor package, which allows for space-efficient integration into electronic devices.
Essence
The essence of this product lies in its ability to provide fast and reliable memory storage and retrieval capabilities for electronic devices.
Packaging/Quantity
The IDT71V2558S133PF is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the supplier.
Specifications
- Memory Type: Static Random Access Memory (SRAM)
- Organization: 32M x 8 bits
- Operating Voltage: 3.3V
- Access Time: 133 nanoseconds
- Operating Temperature Range: -40°C to +85°C
- Pin Count: 44 pins
- Data Retention: Greater than 10 years
Detailed Pin Configuration
- VCC
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- OE#
- WE#
- CE#
- I/O0
- I/O1
- I/O2
- I/O3
- I/O4
- I/O5
- I/O6
- I/O7
- GND
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
Functional Features
- High-speed data access and retrieval
- Low power consumption during standby mode
- Easy integration into circuit designs
- Reliable data retention even in harsh environmental conditions
- Compatibility with various electronic devices and systems
Advantages and Disadvantages
Advantages
- Fast access time allows for quick data retrieval
- Low power consumption helps conserve energy
- Large storage capacity accommodates a wide range of applications
- Reliable data retention ensures data integrity
- Easy integration simplifies circuit design and manufacturing processes
Disadvantages
- Relatively higher cost compared to other memory technologies
- Limited scalability beyond the specified storage capacity
- Sensitivity to electrical noise and interference
Working Principles
The IDT71V2558S133PF operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a matrix structure, allowing for efficient addressing and retrieval of data.
When a read operation is initiated, the address lines specify the location of the desired data, and the output data lines provide the requested information. During a write operation, the data to be stored is applied to the input/output lines, along with the corresponding address. The write enable signal controls the writing process.
Detailed Application Field Plans
The IDT71V2558S133PF finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Automotive electronics - Industrial control systems
Detailed and Complete Alternative Models
- IDT71V2558S100PF
- IDT71V2558S85PF
- IDT71V2558S70PF
- IDT71V2558S55PF
- IDT71V2558S40PF
These alternative models offer similar functionality and characteristics to the IDT71V2558S133PF, but with different access times and operating voltages.
In conclusion, the IDT71V2558S133PF is a high-performance SRAM integrated circuit that provides fast and reliable memory storage capabilities for a wide range of electronic devices. Its characteristics, pin configuration, functional features, advantages, and disadvantages make it suitable for various applications in different industries. Additionally, there are alternative models available with varying specifications to cater to specific requirements.
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V2558S133PF v technických řešeních
Sure! Here are 10 common questions and answers related to the application of IDT71V2558S133PF in technical solutions:
Q: What is IDT71V2558S133PF? A: IDT71V2558S133PF is a high-speed, low-power CMOS static RAM (SRAM) device manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V2558S133PF? A: IDT71V2558S133PF has a capacity of 32 megabits (4 megabytes) organized as 2,097,152 words by 16 bits.
Q: What is the operating voltage range for IDT71V2558S133PF? A: The operating voltage range for IDT71V2558S133PF is 3.0V to 3.6V.
Q: What is the access time of IDT71V2558S133PF? A: IDT71V2558S133PF has an access time of 13.5 ns, which refers to the time taken to read or write data from/to the memory.
Q: Can IDT71V2558S133PF be used in battery-powered devices? A: Yes, IDT71V2558S133PF is designed to operate at low power, making it suitable for battery-powered devices.
Q: Does IDT71V2558S133PF support multiple read/write operations simultaneously? A: No, IDT71V2558S133PF does not support simultaneous multiple read/write operations. It operates in a single-port mode.
Q: Is IDT71V2558S133PF compatible with other SRAM devices? A: Yes, IDT71V2558S133PF is compatible with other standard SRAM devices in terms of pinout and functionality.
Q: Can IDT71V2558S133PF be used in industrial applications? A: Yes, IDT71V2558S133PF is suitable for industrial applications due to its wide operating temperature range (-40°C to +85°C).
Q: Does IDT71V2558S133PF have any built-in error correction capabilities? A: No, IDT71V2558S133PF does not have built-in error correction capabilities. External error correction techniques can be used if required.
Q: What are some typical applications of IDT71V2558S133PF? A: IDT71V2558S133PF is commonly used in networking equipment, telecommunications systems, embedded systems, and other high-performance computing applications.
Please note that the answers provided here are general and may vary depending on specific requirements and use cases.