IDT, Integrated Device Technology Inc
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IDT71V2558S100BG
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IDT71V2558S100BG

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V2558S100BG is a high-speed, low-power 256K x 18 synchronous dual-port static random access memory (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High-speed operation - Low power consumption - Dual-port architecture - Synchronous interface - Large storage capacity - Reliable performance

Package: The IDT71V2558S100BG is available in a 100-ball grid array (BGA) package, which provides excellent thermal dissipation and compact size for easy integration into electronic circuits.

Essence: This IC serves as a reliable and efficient memory component that enables fast data storage and retrieval in electronic devices.

Packaging/Quantity: The IDT71V2558S100BG is typically sold in reels or trays, with each reel containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

  • Memory Size: 256K x 18 bits
  • Access Time: 10 ns
  • Operating Voltage: 3.3V
  • Standby Current: 5 mA (typical)
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: 10 years

Pin Configuration

The IDT71V2558S100BG features a 100-ball BGA package with the following pin configuration:

Pin Configuration Diagram

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. VDDQ
  22. GND
  23. CLK0
  24. CLK1
  25. GND
  26. GND
  27. GND
  28. GND
  29. GND
  30. GND
  31. GND
  32. GND
  33. GND
  34. GND
  35. GND
  36. GND
  37. GND
  38. GND
  39. GND
  40. GND
  41. GND
  42. GND
  43. GND
  44. GND
  45. GND
  46. GND
  47. GND
  48. GND
  49. GND
  50. GND
  51. GND
  52. GND
  53. GND
  54. GND
  55. GND
  56. GND
  57. GND
  58. GND
  59. GND
  60. GND
  61. GND
  62. GND
  63. GND
  64. GND
  65. GND
  66. GND
  67. GND
  68. GND
  69. GND
  70. GND
  71. GND
  72. GND
  73. GND
  74. GND
  75. GND
  76. GND
  77. GND
  78. GND
  79. GND
  80. GND
  81. GND
  82. GND
  83. GND
  84. GND
  85. GND
  86. GND
  87. GND
  88. GND
  89. GND
  90. GND
  91. GND
  92. GND
  93. GND
  94. GND
  95. GND
  96. GND
  97. GND
  98. GND
  99. GND
  100. VDDQ

Functional Features

The IDT71V2558S100BG offers the following functional features:

  1. Dual-Port Architecture: Allows simultaneous read and write operations from two different ports, enabling efficient data transfer between multiple devices or subsystems.
  2. Synchronous Interface: The memory operates synchronously with an external clock signal, ensuring accurate timing and reliable data transfer.
  3. High-Speed Operation: With an access time of 10 ns, the IDT71V2558S100BG provides fast data retrieval, making it suitable for applications requiring quick response times.
  4. Low Power Consumption: Designed with power-saving features, this IC minimizes energy consumption, making it ideal for battery-powered devices.
  5. Large Storage Capacity: The 256K x

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V2558S100BG v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V2558S100BG in technical solutions:

  1. Q: What is IDT71V2558S100BG? A: IDT71V2558S100BG is a high-speed, low-power CMOS static RAM (SRAM) device with a capacity of 32 megabits (4 megabytes).

  2. Q: What are the key features of IDT71V2558S100BG? A: Some key features include a synchronous interface, fast access times, low power consumption, and a wide operating voltage range.

  3. Q: What applications can IDT71V2558S100BG be used for? A: IDT71V2558S100BG is commonly used in applications such as networking equipment, telecommunications systems, industrial automation, and embedded systems.

  4. Q: What is the operating voltage range of IDT71V2558S100BG? A: The operating voltage range is typically between 3.0V and 3.6V.

  5. Q: What is the access time of IDT71V2558S100BG? A: The access time is typically 10 ns, which allows for fast data retrieval.

  6. Q: Does IDT71V2558S100BG support multiple read and write operations simultaneously? A: Yes, IDT71V2558S100BG supports simultaneous read and write operations, making it suitable for high-performance applications.

  7. Q: Can IDT71V2558S100BG operate in different temperature ranges? A: Yes, IDT71V2558S100BG is designed to operate in commercial temperature ranges (-40°C to +85°C) and industrial temperature ranges (-40°C to +105°C).

  8. Q: Does IDT71V2558S100BG have any power-saving features? A: Yes, IDT71V2558S100BG has a deep power-down mode that reduces power consumption when the device is not in use.

  9. Q: What is the package type of IDT71V2558S100BG? A: IDT71V2558S100BG is available in a 100-pin plastic ball grid array (PBGA) package.

  10. Q: Can IDT71V2558S100BG be used as a drop-in replacement for other SRAM devices? A: Yes, IDT71V2558S100BG is designed to be pin-compatible with other 32Mb SRAM devices, making it easy to replace them in existing designs.

Please note that these answers are general and may vary depending on specific datasheet information and application requirements.