IDT71V2556S133BG8

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics: High-speed, low-power, synchronous SRAM
Package: BGA (Ball Grid Array)
Essence: The IDT71V2556S133BG8 is a high-performance memory chip designed for various applications that require fast and reliable data storage.
Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel.

Specifications

Memory Type: Synchronous SRAM
Density: 4 Megabits (256K x 16)
Operating Voltage: 3.3V
Access Time: 8.0 ns
Operating Temperature Range: -40°C to +85°C
Interface: Parallel
Data Retention: 10 years
Package Dimensions: 13mm x 15mm

Pin Configuration

The IDT71V2556S133BG8 has a total of 119 pins. Below is the detailed pin configuration:

VDDQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
VSSQ
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
VDDQ
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
A64
A65
A66
A67
A68
A69
A70
A71
A72
A73
A74
A75
A76
A77
A78
A79
A80
A81
A82
A83
A84
A85
A86
A87
A88
A89
A90
A91
A92
A93
A94
A95
A96
A97
A98
VSSQ

Functional Features

High-speed operation with an access time of 8.0 ns
Low-power consumption for energy-efficient applications
Synchronous interface for easy integration into various systems
Reliable data retention for up to 10 years
Wide operating temperature range (-40°C to +85°C) for versatile usage scenarios

Advantages and Disadvantages

Advantages: - High-speed performance enables quick data access - Low-power consumption helps in reducing energy usage - Synchronous interface simplifies system integration - Reliable data retention ensures long-term data integrity

Disadvantages: - Limited memory capacity (4 Megabits) - Parallel interface may require additional circuitry for certain

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V2556S133BG8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V2556S133BG8 in technical solutions:

Question: What is the IDT71V2556S133BG8?
Answer: The IDT71V2556S133BG8 is a high-speed, low-power CMOS static RAM (SRAM) with a capacity of 256K x 36 bits.
Question: What is the operating voltage range for the IDT71V2556S133BG8?
Answer: The IDT71V2556S133BG8 operates at a voltage range of 3.3V ± 0.3V.
Question: What is the maximum clock frequency supported by the IDT71V2556S133BG8?
Answer: The IDT71V2556S133BG8 supports a maximum clock frequency of 133 MHz.
Question: Can the IDT71V2556S133BG8 be used in battery-powered devices?
Answer: Yes, the IDT71V2556S133BG8 is designed to operate at low power, making it suitable for battery-powered devices.
Question: What is the access time of the IDT71V2556S133BG8?
Answer: The IDT71V2556S133BG8 has an access time of 8 ns.
Question: Does the IDT71V2556S133BG8 support multiple chip enable inputs?
Answer: Yes, the IDT71V2556S133BG8 supports two chip enable inputs (CE1 and CE2) for easy interfacing with other devices.
Question: Can the IDT71V2556S133BG8 be used in industrial applications?
Answer: Yes, the IDT71V2556S133BG8 is designed to operate in industrial temperature ranges (-40°C to +85°C).
Question: What is the package type of the IDT71V2556S133BG8?
Answer: The IDT71V2556S133BG8 is available in a 100-pin TQFP (Thin Quad Flat Pack) package.
Question: Does the IDT71V2556S133BG8 support burst mode operation?
Answer: Yes, the IDT71V2556S133BG8 supports burst mode operation for efficient data transfer.
Question: Can the IDT71V2556S133BG8 be used as a cache memory in microprocessor-based systems?
Answer: Yes, the IDT71V2556S133BG8 can be used as a cache memory due to its high-speed and low-power characteristics.

Please note that these answers are general and may vary depending on the specific application and requirements.