IDT, Integrated Device Technology Inc
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IDT71V2548S133PF
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IDT71V2548S133PF

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 119-ball BGA (Ball Grid Array)
  • Essence: The IDT71V2548S133PF is a high-performance SRAM designed for use in various electronic devices.
  • Packaging/Quantity: Available in tape and reel packaging with a quantity of 250 units per reel.

Specifications

  • Memory Size: 4 Megabits (4M x 8 or 2M x 16)
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention Voltage: 2.0V minimum
  • Standby Current: 5 mA maximum
  • Package Dimensions: 8mm x 13mm

Pin Configuration

The IDT71V2548S133PF has a total of 119 pins. Here is a brief overview of the pin configuration:

  • VDDQ: Power supply voltage for I/O buffers
  • VDD: Power supply voltage for core circuitry
  • GND: Ground
  • A0-A21: Address inputs
  • DQ0-DQ15: Data inputs/outputs
  • WE#: Write Enable input
  • OE#: Output Enable input
  • CE#: Chip Enable input
  • UB#/LB#: Upper Byte/Lower Byte control inputs
  • CLK: Clock input
  • RAS#: Row Address Strobe input
  • CAS#: Column Address Strobe input

For a detailed pin configuration diagram, please refer to the datasheet provided by the manufacturer.

Functional Features

  • High-speed operation: The IDT71V2548S133PF offers fast access times, making it suitable for applications that require quick data retrieval.
  • Low-power consumption: This SRAM is designed to minimize power consumption, making it ideal for battery-powered devices or energy-efficient systems.
  • Synchronous operation: The device operates synchronously with an external clock signal, ensuring reliable and synchronized data transfers.
  • Easy integration: The 119-ball BGA package allows for easy integration into circuit boards, providing a compact and space-saving solution.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous operation ensures reliable data transfers. - Compact BGA package allows for easy integration.

Disadvantages: - Limited memory size compared to other storage devices. - Higher cost compared to traditional non-volatile memory options.

Working Principles

The IDT71V2548S133PF is based on static random-access memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. The device operates synchronously with an external clock signal, allowing for precise timing of data transfers. When the appropriate control signals are activated, the SRAM reads or writes data from/to the specified memory location.

Detailed Application Field Plans

The IDT71V2548S133PF can be used in various electronic devices and applications, including but not limited to: - Networking equipment - Telecommunications systems - Industrial automation - Medical devices - Automotive electronics - Consumer electronics

Alternative Models

Here are some alternative models that offer similar functionality to the IDT71V2548S133PF: - Cypress CY7C1041DV33 - Micron MT48LC4M16A2TG-75 - Samsung K6R4016V1D-TC10

These alternative models can be considered based on specific requirements and availability.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V2548S133PF v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V2548S133PF in technical solutions:

  1. Q: What is IDT71V2548S133PF? A: IDT71V2548S133PF is a high-speed, low-power CMOS static RAM (SRAM) device with a capacity of 256K x 48 bits.

  2. Q: What are the key features of IDT71V2548S133PF? A: Some key features include a synchronous interface, fast access time of 13 ns, low power consumption, and a wide operating voltage range.

  3. Q: What are the typical applications of IDT71V2548S133PF? A: IDT71V2548S133PF is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance computing applications.

  4. Q: Can IDT71V2548S133PF be used as a cache memory? A: Yes, IDT71V2548S133PF can be used as a cache memory due to its fast access time and high-speed operation.

  5. Q: What is the operating voltage range for IDT71V2548S133PF? A: The operating voltage range for IDT71V2548S133PF is typically between 3.0V and 3.6V.

  6. Q: Does IDT71V2548S133PF support multiple read and write operations simultaneously? A: Yes, IDT71V2548S133PF supports simultaneous read and write operations, making it suitable for multi-tasking applications.

  7. Q: Can IDT71V2548S133PF operate in harsh environments? A: IDT71V2548S133PF is designed to operate in industrial temperature ranges, making it suitable for harsh environments.

  8. Q: What is the power consumption of IDT71V2548S133PF? A: The power consumption of IDT71V2548S133PF is relatively low, making it energy-efficient for battery-powered devices.

  9. Q: Does IDT71V2548S133PF have built-in error correction capabilities? A: No, IDT71V2548S133PF does not have built-in error correction capabilities. Additional error correction mechanisms may be required for critical applications.

  10. Q: Can IDT71V2548S133PF be easily integrated into existing designs? A: Yes, IDT71V2548S133PF is available in a standard 100-pin TQFP package, which makes it compatible with most PCB layouts and easy to integrate into existing designs.

Please note that these answers are general and may vary depending on specific requirements and use cases.