IDT71V2546XS150PF8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 150-pin plastic quad flat package (PQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 256K (32K x 8)
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years
• Interface: Parallel
• Organization: 32K words x 8 bits
• Clock Frequency: 150 MHz
• Power Supply Current: 100 mA (typical)

Pin Configuration

The IDT71V2546XS150PF8 has a total of 150 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. GND
43. WE#
44. OE#
45. CE#
46. UB#
47. LB#
48. CLK
49. CLKEN#
50. CKE#

(Note: The pin configuration continues for the remaining pins.)

Functional Features

• High-speed operation with a clock frequency of up to 150 MHz
• Low-power consumption, suitable for battery-powered devices
• Synchronous interface allows for efficient data transfer
• Reliable data retention for long periods
• Easy integration into various electronic systems

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data access - Low-power consumption prolongs battery life - Synchronous interface ensures efficient data transfer - Reliable data retention for extended periods

Disadvantages: - Limited storage capacity compared to other memory devices - Higher cost per bit compared to some alternative models

Working Principles

The IDT71V2546XS150PF8 is based on synchronous static random-access memory (SRAM) technology. It stores data in a volatile manner, meaning that the data is lost when power is removed. The device operates synchronously with an external clock signal, allowing for precise timing and efficient data transfer. The SRAM cells within the device store each bit of data as a charge on a capacitor, which is maintained by periodic refresh cycles.

Detailed Application Field Plans

The IDT71V2546XS150PF8 can be used in various applications that require high-speed and reliable data storage. Some potential application fields include:

1. Networking equipment: Used as cache memory in routers and switches to improve data processing speed.
2. Telecommunications systems: Provides fast data buffering capabilities in communication infrastructure devices.
3. Industrial control systems: Enables quick data access for real-time monitoring and control applications.
4. Automotive electronics: Used in advanced driver assistance systems (ADAS) and infotainment systems for efficient data storage.

Detailed and Complete Alternative Models

1. IDT71V2546S150PF: Similar to IDT71V2546XS150PF8, but with a different package type (SOJ).
2. MT45W8MW16BGX-701 WT: Synchronous SRAM with higher density (128M x 16) and lower operating voltage (1.8V).
3. IS61LV25616AL-10TLI: Asynchronous SRAM with the same density (256K x 16) and lower power consumption.

(Note: The list of alternative models can be expanded based on specific requirements and availability in the market.)

This encyclopedia entry provides an overview of the