IDT71V016SA15YI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 48-pin TSOP (Thin Small Outline Package)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Operating Voltage: 3.3V
• Access Time: 15 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5mA
• Package Dimensions: 12.8mm x 20.2mm x 1.0mm

Pin Configuration

The IDT71V016SA15YI8 has a total of 48 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. CE#
20. WE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. VCC
30. GND
31. I/O8
32. I/O9
33. I/O10
34. I/O11
35. I/O12
36. I/O13
37. I/O14
38. I/O15
39. VCC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and synchronized data transfers.
• Static random-access memory technology provides non-volatile storage capabilities.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low standby current helps conserve power. - Reliable data retention for extended periods. - Compact package size for space-constrained applications.

Disadvantages: - Limited memory capacity compared to newer memory technologies. - Higher cost per bit compared to other memory options. - Sensitivity to environmental conditions, such as temperature and voltage fluctuations.

Working Principles

The IDT71V016SA15YI8 operates based on the principles of static random-access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The synchronous design ensures that data transfers occur in synchronization with an external clock signal. This allows for efficient and reliable data access and retrieval.

Detailed Application Field Plans

The IDT71V016SA15YI8 is commonly used in various electronic devices and systems, including:

1. Computer motherboards
2. Networking equipment
3. Telecommunications devices
4. Industrial control systems
5. Automotive electronics
6. Consumer electronics

Alternative Models

There are several alternative models available that offer similar functionality to the IDT71V016SA15YI8. Some notable alternatives include:

1. Cypress CY7C1041DV33
2. Micron MT48LC4M32B2P-6A
3. Samsung K6R4016V1D-UI10
4. Renesas R1LV0416DSB-5SI

These alternative models provide comparable memory capacity, access times, and package options.

In conclusion, the IDT71V016SA15YI8 is a high-speed, low-power synchronous SRAM memory device. It offers reliable data storage and retrieval capabilities in various electronic applications. While it has certain limitations, it remains a popular choice for many designers and engineers in need of fast and efficient memory solutions.