The IDT71V016SA12PHI8 has a total of 32 pins, which are assigned specific functions. The pin configuration is as follows:
(Note: The remaining pins are not listed here for brevity.)
Advantages: - High-speed performance - Low power consumption - Large storage capacity - Non-volatile memory
Disadvantages: - Relatively higher cost compared to other memory technologies - Limited endurance compared to some other memory types
The IDT71V016SA12PHI8 is a static random access memory (SRAM) device. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a matrix, with each cell storing one bit of data. Accessing the data involves providing the appropriate address and control signals to read from or write to specific memory locations.
The IDT71V016SA12PHI8 is commonly used in various electronic devices that require high-speed and non-volatile memory. Some potential application fields include:
(Note: These alternative models are provided for reference and may not cover all available options.)
This encyclopedia entry provides an overview of the IDT71V016SA12PHI8 memory device. It includes basic information such as its category, use, characteristics, package, essence, packaging/quantity details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
Sure! Here are 10 common questions and answers related to the application of IDT71V016SA12PHI8 in technical solutions:
Question: What is IDT71V016SA12PHI8?
Answer: IDT71V016SA12PHI8 is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).
Question: What is the capacity of IDT71V016SA12PHI8?
Answer: IDT71V016SA12PHI8 has a capacity of 16 megabits (2 megabytes) organized as 1,048,576 words by 16 bits.
Question: What is the operating voltage range for IDT71V016SA12PHI8?
Answer: The operating voltage range for IDT71V016SA12PHI8 is typically between 3.0V and 3.6V.
Question: What is the access time of IDT71V016SA12PHI8?
Answer: IDT71V016SA12PHI8 has an access time of 12 nanoseconds (ns), which refers to the time it takes to read or write data.
Question: Can IDT71V016SA12PHI8 be used in battery-powered devices?
Answer: Yes, IDT71V016SA12PHI8 can be used in battery-powered devices as long as the operating voltage requirements are met.
Question: Does IDT71V016SA12PHI8 support burst mode operation?
Answer: No, IDT71V016SA12PHI8 does not support burst mode operation. It is a synchronous SRAM with a standard asynchronous interface.
Question: What is the package type for IDT71V016SA12PHI8?
Answer: IDT71V016SA12PHI8 is available in a 44-pin plastic thin small outline package (TSOP).
Question: Can IDT71V016SA12PHI8 be used as a direct replacement for other SRAM chips?
Answer: Yes, IDT71V016SA12PHI8 can be used as a direct replacement for other 16Mb (2MB) x 16 SRAM chips with compatible specifications.
Question: What are some typical applications of IDT71V016SA12PHI8?
Answer: IDT71V016SA12PHI8 is commonly used in networking equipment, telecommunications systems, industrial automation, and embedded systems.
Question: Does IDT provide any application notes or technical documentation for IDT71V016SA12PHI8?
Answer: Yes, IDT provides detailed datasheets, application notes, and technical documentation for IDT71V016SA12PHI8 on their official website, which can be accessed for further information and guidance.
Please note that the answers provided here are general and may vary depending on specific requirements and use cases. It is always recommended to refer to the official documentation and consult with technical experts for accurate and up-to-date information.