IDT71T75902S80BG8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
• Package: BGA (Ball Grid Array)
• Essence: The IDT71T75902S80BG8 is a high-performance SRAM designed for use in various applications that require fast and reliable memory access.
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel.

Specifications

• Memory Size: 2 Megabits (256K x 8 bits)
• Operating Voltage: 3.3V
• Access Time: 8 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5 mA
• Package Dimensions: 13mm x 13mm

Pin Configuration

The IDT71T75902S80BG8 has a total of 100 pins. Below is the detailed pin configuration:

1. A0-A17: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE: Chip Enable
6. VCC: Power Supply
7. GND: Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed operation: The IDT71T75902S80BG8 offers fast access times, making it suitable for applications that require quick data retrieval.
• Low-power consumption: This SRAM is designed to minimize power usage, making it ideal for battery-powered devices or energy-efficient systems.
• Synchronous operation: The device operates synchronously with the system clock, ensuring reliable and synchronized data transfers.
• Easy integration: The IDT71T75902S80BG8 can be easily integrated into existing circuit designs due to its standard pin configuration and compatibility with common memory interfaces.

Advantages and Disadvantages

Advantages: - High-speed operation allows for fast data access. - Low-power consumption prolongs battery life in portable devices. - Synchronous operation ensures reliable data transfers. - Easy integration into existing circuit designs.

Disadvantages: - Limited memory size (2 Megabits) compared to larger capacity memory devices. - Higher cost per bit compared to other memory technologies like NAND flash.

Working Principles

The IDT71T75902S80BG8 is based on static random access memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. When an address is provided, the corresponding data is read from or written to the memory cells. The synchronous operation ensures that data transfers occur at specific points in time, synchronized with the system clock.

Detailed Application Field Plans

The IDT71T75902S80BG8 can be used in various applications, including:

1. Embedded Systems: Provides fast and reliable memory access for microcontrollers and digital signal processors (DSPs).
2. Networking Equipment: Used in routers, switches, and network interface cards to store routing tables and buffer data.
3. Telecommunications: Enables high-speed data buffering and caching in communication systems.
4. Industrial Automation: Supports real-time data processing and storage in control systems and PLCs.
5. Automotive Electronics: Used in automotive control units for storing critical data and firmware.

Alternative Models

Below are some alternative models that offer similar functionality:

1. IDT71V3557S85BQG: 2 Megabit (256K x 8) SRAM, 8 ns access time, BGA package.
2. Cypress CY62157EV30LL-45ZSXI: 2 Megabit (256K x 8) SRAM, 45 ns access time, SOIC package.
3. Micron MT45W4MW16BFB-708 WT: 2 Megabit (256K x 8) SRAM, 70 ns access time, TSOP package.

(Note: The above models are provided as examples and may not be an exhaustive list of alternatives.)

In conclusion, the IDT71T75902S80BG8 is a high-speed, low-power SRAM that offers reliable memory access for various applications. Its synchronous operation, easy integration, and compatibility make it a suitable choice for designers looking for fast and efficient memory solutions.