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IDT71T75902S75BGGI

IDT71T75902S75BGGI

Product Overview

  • Category: Integrated Circuit
  • Use: Memory Device
  • Characteristics: High-speed, Low-power, Large capacity
  • Package: BGA (Ball Grid Array)
  • Essence: Non-volatile memory device
  • Packaging/Quantity: Single unit per package

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Capacity: 2 Megabits (256K x 8)
  • Operating Voltage: 3.3V
  • Access Time: 7.5 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: More than 20 years
  • Interface: Parallel

Detailed Pin Configuration

The IDT71T75902S75BGGI has a total of 119 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. GND
  11. I/O0
  12. I/O1
  13. I/O2
  14. I/O3
  15. I/O4
  16. I/O5
  17. I/O6
  18. I/O7
  19. CE1
  20. CE2
  21. WE
  22. OE
  23. BYTE
  24. NC
  25. VCC
  26. A8
  27. A9
  28. A10
  29. A11
  30. A12
  31. A13
  32. A14
  33. A15
  34. GND
  35. I/O8
  36. I/O9
  37. I/O10
  38. I/O11
  39. I/O12
  40. I/O13
  41. I/O14
  42. I/O15
  43. CE3
  44. CE4
  45. WE
  46. OE
  47. BYTE
  48. NC
  49. VCC
  50. A16
  51. A17
  52. A18
  53. A19
  54. A20
  55. A21
  56. A22
  57. A23
  58. GND
  59. I/O16
  60. I/O17
  61. I/O18
  62. I/O19
  63. I/O20
  64. I/O21
  65. I/O22
  66. I/O23
  67. CE5
  68. CE6
  69. WE
  70. OE
  71. BYTE
  72. NC
  73. VCC
  74. A24
  75. A25
  76. A26
  77. A27
  78. A28
  79. A29
  80. A30
  81. A31
  82. GND
  83. I/O24
  84. I/O25
  85. I/O26
  86. I/O27
  87. I/O28
  88. I/O29
  89. I/O30
  90. I/O31
  91. CE7
  92. CE8
  93. WE
  94. OE
  95. BYTE
  96. NC
  97. VCC
  98. A32
  99. A33
  100. A34
  101. A35
  102. A36
  103. A37
  104. A38
  105. A39
  106. GND
  107. I/O32
  108. I/O33
  109. I/O34
  110. I/O35
  111. I/O36
  112. I/O37
  113. I/O38
  114. I/O39
  115. CE9
  116. CE10
  117. WE
  118. OE
  119. BYTE

Functional Features

  • High-speed access and data transfer
  • Low-power consumption
  • Non-volatile memory retains data even when power is lost
  • Large capacity for storing data
  • Parallel interface for easy integration with other components

Advantages and Disadvantages

Advantages: - Fast access time allows for quick data retrieval - Low-power consumption helps conserve energy - Non-volatile memory ensures data integrity during power outages - Large capacity provides ample storage space - Parallel interface simplifies integration with other devices

Disadvantages: - Limited to a specific memory capacity (2 Megabits) - Requires careful handling due to the delicate BGA package

Working Principles

The IDT71T75902S75BGGI is a static random access memory (SRAM) device. It stores data using electronic circuits that retain information as long as power is supplied. The memory cells

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71T75902S75BGGI v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71T75902S75BGGI in technical solutions:

  1. Question: What is IDT71T75902S75BGGI?
    Answer: IDT71T75902S75BGGI is a specific model of integrated circuit (IC) manufactured by Integrated Device Technology (IDT). It is commonly used in technical solutions for memory storage and data processing.

  2. Question: What is the capacity of IDT71T75902S75BGGI?
    Answer: The IDT71T75902S75BGGI has a capacity of 2 megabits (Mb), which is equivalent to 256 kilobytes (KB).

  3. Question: What is the operating voltage range for IDT71T75902S75BGGI?
    Answer: The operating voltage range for IDT71T75902S75BGGI is typically between 4.5 volts (V) and 5.5 volts (V).

  4. Question: What is the maximum clock frequency supported by IDT71T75902S75BGGI?
    Answer: The maximum clock frequency supported by IDT71T75902S75BGGI is 75 megahertz (MHz).

  5. Question: Can IDT71T75902S75BGGI be used in both read and write operations?
    Answer: Yes, IDT71T75902S75BGGI can be used for both read and write operations, making it suitable for applications that require data storage and retrieval.

  6. Question: Does IDT71T75902S75BGGI support random access?
    Answer: Yes, IDT71T75902S75BGGI supports random access, allowing for efficient retrieval of data from any location within the memory.

  7. Question: What is the access time of IDT71T75902S75BGGI?
    Answer: The access time of IDT71T75902S75BGGI is typically around 10 to 15 nanoseconds (ns), which refers to the time it takes to read or write data.

  8. Question: Can IDT71T75902S75BGGI be used in automotive applications?
    Answer: Yes, IDT71T75902S75BGGI is suitable for automotive applications as it can operate within the specified temperature range and withstand harsh environmental conditions.

  9. Question: Does IDT71T75902S75BGGI have built-in error correction capabilities?
    Answer: No, IDT71T75902S75BGGI does not have built-in error correction capabilities. However, external error correction techniques can be implemented if required.

  10. Question: Is IDT71T75902S75BGGI a commonly used IC in technical solutions?
    Answer: Yes, IDT71T75902S75BGGI is a widely used IC in various technical solutions that require reliable and high-speed memory storage.