IDT71T75702S80PFI8

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71T75702S80PFI8 is a high-performance synchronous static random access memory (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable data retention - Easy integration into existing circuitry

Package: The IDT71T75702S80PFI8 is available in a 208-pin plastic quad flat pack (PQFP) package.

Essence: This IC serves as a vital component in electronic devices, providing fast and reliable data storage and retrieval capabilities.

Packaging/Quantity: Each package contains one IDT71T75702S80PFI8 IC.

Specifications

• Memory Size: 2 Megabits (256K x 8)
• Access Time: 8 ns
• Operating Voltage: 3.3V
• Standby Current: 10 mA (typical)
• Operating Temperature Range: -40°C to +85°C
• Package Dimensions: 28mm x 28mm x 4.45mm

Detailed Pin Configuration

The IDT71T75702S80PFI8 has a total of 208 pins. The pin configuration is as follows:

(Pin diagram goes here)

Functional Features

1. High-Speed Operation: The IDT71T75702S80PFI8 offers fast access times, allowing for quick data retrieval and processing.
2. Low Power Consumption: This IC is designed to minimize power consumption, making it suitable for battery-powered devices.
3. Large Storage Capacity: With a memory size of 2 Megabits, the IDT71T75702S80PFI8 can store a significant amount of data.
4. Reliable Data Retention: The SRAM technology used in this IC ensures reliable data retention, even during power interruptions.
5. Easy Integration: The IDT71T75702S80PFI8 can be easily integrated into existing circuitry, simplifying the design process.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low power consumption prolongs battery life. - Large storage capacity accommodates extensive data requirements. - Reliable data retention ensures data integrity. - Easy integration saves design time and effort.

Disadvantages: - Limited memory size compared to other storage technologies. - Higher cost per bit compared to alternative memory solutions.

Working Principles

The IDT71T75702S80PFI8 utilizes synchronous SRAM technology. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC operates by synchronizing read and write operations with an external clock signal, allowing for precise timing and high-speed data transfer.

Detailed Application Field Plans

The IDT71T75702S80PFI8 finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V35761S85BQI: 2 Megabit (256K x 8) SRAM with an access time of 8 ns, operating at 3.3V.
2. Cypress CY62157EV30LL-45ZSXI: 2 Megabit (256K x 8) SRAM with an access time of 10 ns, operating at 3.0V.
3. Micron MT45W2MW16BFB-708 WT: 2 Megabit (256K x 8) SRAM with an access time of 6 ns, operating at 1.8V.

These alternative models offer similar functionality and can be considered as substitutes for the IDT71T75702S80PFI8 in various applications.

(Note: The above information is fictional and provided for demonstration purposes only. The actual specifications, pin configuration, and alternative models may vary.)