IDT71T75602S200BGGI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: BGA (Ball Grid Array)
• Essence: Provides high-performance data storage and retrieval capabilities
• Packaging/Quantity: Single unit per package

Specifications

• Memory Type: Synchronous SRAM
• Memory Size: 2 Megabits (256K x 8)
• Operating Voltage: 1.8V - 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years
• Interface: Parallel
• Pin Count: 200 pins

Detailed Pin Configuration

The IDT71T75602S200BGGI8 has a total of 200 pins. The pin configuration is as follows:

• Pins 1-8: Address Inputs (A0-A7)
• Pins 9-16: Address Inputs (A8-A15)
• Pins 17-24: Address Inputs (A16-A23)
• Pins 25-32: Address Inputs (A24-A31)
• Pins 33-40: Data Inputs/Outputs (DQ0-DQ7)
• Pins 41-48: Data Inputs/Outputs (DQ8-DQ15)
• Pins 49-56: Data Inputs/Outputs (DQ16-DQ23)
• Pins 57-64: Data Inputs/Outputs (DQ24-DQ31)
• Pins 65-72: Chip Enable (CE0-CE7)
• Pins 73-80: Output Enable (OE0-OE7)
• Pins 81-88: Write Enable (WE0-WE7)
• Pins 89-96: Byte Enable (BE0-BE3)
• Pins 97-104: Clock Input (CLK)
• Pins 105-112: Power Supply (VDD)
• Pins 113-120: Ground (GND)
• Pins 121-128: No Connection (NC)
• Pins 129-136: No Connection (NC)
• Pins 137-144: No Connection (NC)
• Pins 145-152: No Connection (NC)
• Pins 153-160: No Connection (NC)
• Pins 161-168: No Connection (NC)
• Pins 169-176: No Connection (NC)
• Pins 177-184: No Connection (NC)
• Pins 185-192: No Connection (NC)
• Pins 193-200: No Connection (NC)

Functional Features

• High-speed operation for quick data access
• Low-power consumption for energy efficiency
• Synchronous interface for synchronized data transfers
• Reliable data retention for long-term storage
• Easy integration into various electronic systems

Advantages and Disadvantages

Advantages

• Fast access time allows for efficient data retrieval
• Low power consumption helps conserve energy
• Synchronous interface enables synchronized data transfers
• Reliable data retention ensures data integrity
• Versatile integration options due to its compact package

Disadvantages

• Limited memory size compared to other memory devices
• Parallel interface may require additional circuitry for compatibility with certain systems
• Higher cost compared to some alternative memory solutions

Working Principles

The IDT71T75602S200BGGI8 operates as a synchronous SRAM, utilizing a parallel interface for data transfer. It stores and retrieves data based on the address inputs provided. The chip enable, output enable, and write enable pins control the read and write operations. The memory operates within a specified voltage range and temperature range to ensure proper functionality.

Detailed Application Field Plans

The IDT71T75602S200BGGI8 can be used in various applications, including:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial automation systems
5. Consumer electronics
6. Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the IDT71T75602S200BGGI8 include:

1. Micron MT48LC16M16A2P-75IT: 256 Megabit Synchronous DRAM (SDRAM)
2. Samsung K4S561632H-UC60: 512 Megabit Synchronous SRAM
3. Cypress CY62157EV30LL-45ZSXI: 2 Megabit Asynchronous SRAM
4. Renesas R1LV0416DSB-7SI#B0: 4 Megabit Low Power SRAM
5. ISSI IS61W