IDT71T75602S200BGGI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous SRAM
• Package: BGA (Ball Grid Array)
• Essence: The IDT71T75602S200BGGI is a high-performance synchronous static random-access memory (SRAM) designed for use in various applications that require fast and reliable data storage.
• Packaging/Quantity: The IDT71T75602S200BGGI is available in a BGA package and is typically sold in reels or trays.

Specifications

• Memory Size: 2 Megabits (256K x 8)
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Interface: Synchronous

Detailed Pin Configuration

The IDT71T75602S200BGGI has a total of 119 pins. Here is a brief overview of the pin configuration:

• VDD: Power supply voltage
• VSS: Ground
• CLK: Clock input
• OE: Output enable
• WE: Write enable
• A0-A17: Address inputs
• DQ0-DQ7: Data inputs/outputs
• ...

For a complete and detailed pin configuration diagram, please refer to the product datasheet.

Functional Features

• Synchronous operation with an external clock signal
• Low-power consumption
• Fast access time for efficient data retrieval
• Easy integration into existing systems
• Automatic power-down mode for reduced power consumption during idle periods

Advantages and Disadvantages

Advantages: - High-speed operation - Low-power consumption - Reliable data storage - Easy integration

Disadvantages: - Limited memory size (2 Megabits)

Working Principles

The IDT71T75602S200BGGI operates based on the synchronous SRAM architecture. It uses an external clock signal to synchronize data transfers and access operations. The memory cells store data in a volatile manner, meaning that the stored information is lost when power is removed.

Detailed Application Field Plans

The IDT71T75602S200BGGI can be used in various applications that require high-speed and reliable data storage. Some potential application fields include:

1. Telecommunications: Used in networking equipment for buffering and caching data.
2. Industrial Automation: Used in control systems for storing critical data and program code.
3. Automotive Electronics: Used in automotive control units for fast data processing and storage.
4. Medical Devices: Used in medical equipment for storing patient data and diagnostic information.

Alternative Models

Here are some alternative models that offer similar functionality:

1. Micron MT48LC2M32B2P-6A: 2 Megabit Synchronous SRAM, 10 ns access time.
2. Cypress CY7C1049CV33-10ZXC: 2 Megabit Synchronous SRAM, 10 ns access time.
3. Samsung K6R4016V1D-TC10: 2 Megabit Synchronous SRAM, 10 ns access time.

Please note that the above list is not exhaustive, and there may be other alternative models available in the market.

In conclusion, the IDT71T75602S200BGGI is a high-performance synchronous SRAM that offers fast and reliable data storage capabilities. Its low-power consumption and easy integration make it suitable for various applications in different industries.