IDT, Integrated Device Technology Inc
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IDT71T75602S200BG8
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IDT71T75602S200BG8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: BG8 (Ball Grid Array with 8mm x 8mm body size)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 2 Megabits (256K x 8 bits)
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Data Retention: More than 20 years
  • Power Dissipation: Low power consumption

Detailed Pin Configuration

The IDT71T75602S200BG8 has a total of 48 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. A0
  12. A1
  13. A2
  14. A3
  15. A4
  16. A5
  17. A6
  18. A7
  19. A8
  20. A9
  21. A10
  22. A11
  23. A12
  24. A13
  25. A14
  26. A15
  27. A16
  28. A17
  29. A18
  30. A19
  31. A20
  32. A21
  33. A22
  34. A23
  35. A24
  36. A25
  37. A26
  38. A27
  39. A28
  40. A29
  41. A30
  42. A31
  43. WE#
  44. OE#
  45. CE#
  46. UB#
  47. LB#
  48. VDDQ

Functional Features

  • High-speed operation for quick data access
  • Low power consumption for energy efficiency
  • Synchronous interface for easy integration with other components
  • Reliable data retention for long-term storage
  • Wide operating temperature range for versatile applications

Advantages and Disadvantages

Advantages: - Fast access time for efficient data processing - Low power consumption for energy-saving applications - Reliable data retention for secure storage - Wide operating temperature range for various environments

Disadvantages: - Limited memory capacity compared to higher-density devices - Parallel interface may require additional circuitry for compatibility with serial interfaces

Working Principles

The IDT71T75602S200BG8 operates as a synchronous SRAM, utilizing a parallel interface for data transfer. It stores and retrieves data based on the address provided by the system. The device operates at a low voltage and consumes minimal power during operation. It uses advanced circuitry to ensure fast and reliable data access.

Detailed Application Field Plans

The IDT71T75602S200BG8 is suitable for various applications that require high-speed and low-power memory. Some potential application fields include:

  1. Networking equipment
  2. Telecommunications systems
  3. Industrial automation
  4. Medical devices
  5. Automotive electronics
  6. Consumer electronics

Detailed and Complete Alternative Models

  1. IDT71T75602S200BGI8: Similar specifications but with an extended operating temperature range (-40°C to +125°C).
  2. IDT71T75602S200BQG8: Similar specifications but in a different package (Quad Flat Package with 14mm x 20mm body size).
  3. IDT71T75602S200BFG8: Similar specifications but with lower power dissipation.

These alternative models provide flexibility in choosing the most suitable option based on specific application requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71T75602S200BG8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71T75602S200BG8 in technical solutions:

  1. Question: What is the IDT71T75602S200BG8?
    Answer: The IDT71T75602S200BG8 is a specific model of synchronous SRAM (Static Random Access Memory) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of the IDT71T75602S200BG8?
    Answer: The IDT71T75602S200BG8 has a capacity of 4 Megabits (4Mb) or 512 Kilobytes (512KB).

  3. Question: What is the operating voltage range for this SRAM?
    Answer: The IDT71T75602S200BG8 operates at a voltage range of 2.5V to 3.3V.

  4. Question: What is the access time of the IDT71T75602S200BG8?
    Answer: The access time of this SRAM is 10 ns, meaning it takes 10 nanoseconds to read or write data.

  5. Question: Can the IDT71T75602S200BG8 be used in industrial applications?
    Answer: Yes, this SRAM is suitable for industrial applications as it can operate within the specified temperature range of -40°C to +85°C.

  6. Question: Does the IDT71T75602S200BG8 support multiple chip enable signals?
    Answer: Yes, this SRAM supports two chip enable signals (CE1 and CE2) which allow for flexible memory organization.

  7. Question: What is the pin configuration of the IDT71T75602S200BG8?
    Answer: The IDT71T75602S200BG8 has a 44-pin TSOP (Thin Small Outline Package) configuration.

  8. Question: Can this SRAM be used in battery-powered devices?
    Answer: Yes, the IDT71T75602S200BG8 has low power consumption and can be used in battery-powered devices.

  9. Question: Does the IDT71T75602S200BG8 have any built-in error correction capabilities?
    Answer: No, this SRAM does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

  10. Question: Is the IDT71T75602S200BG8 compatible with standard memory interfaces?
    Answer: Yes, this SRAM is compatible with standard asynchronous and synchronous memory interfaces, making it easy to integrate into existing systems.

Please note that these answers are general and specific details about the application of IDT71T75602S200BG8 may vary depending on the specific technical solution or use case.