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IDT71T75602S133PFI8

IDT71T75602S133PFI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 2 Megabits (256K x 8)
  • Operating Voltage: 3.3V
  • Access Time: 6 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 10 years
  • Interface: Parallel
  • Pin Count: 100 pins

Detailed Pin Configuration

The IDT71T75602S133PFI8 has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSSQ
  11. A0
  12. A1
  13. A2
  14. A3
  15. A4
  16. A5
  17. A6
  18. A7
  19. A8
  20. A9
  21. A10
  22. A11
  23. A12
  24. A13
  25. A14
  26. A15
  27. A16
  28. A17
  29. A18
  30. A19
  31. A20
  32. A21
  33. A22
  34. A23
  35. A24
  36. A25
  37. A26
  38. A27
  39. A28
  40. A29
  41. A30
  42. A31
  43. A32
  44. A33
  45. A34
  46. A35
  47. A36
  48. A37
  49. A38
  50. A39
  51. A40
  52. A41
  53. A42
  54. A43
  55. A44
  56. A45
  57. A46
  58. A47
  59. A48
  60. A49
  61. A50
  62. A51
  63. A52
  64. A53
  65. A54
  66. A55
  67. A56
  68. A57
  69. A58
  70. A59
  71. A60
  72. A61
  73. A62
  74. A63
  75. A64
  76. A65
  77. A66
  78. A67
  79. A68
  80. A69
  81. A70
  82. A71
  83. A72
  84. A73
  85. A74
  86. A75
  87. A76
  88. A77
  89. A78
  90. A79
  91. A80
  92. A81
  93. A82
  94. A83
  95. A84
  96. A85
  97. A86
  98. A87
  99. A88
  100. VDDQ

Functional Features

  • High-speed operation with a 6 ns access time
  • Low-power consumption for energy-efficient performance
  • Synchronous interface for easy integration with other components
  • Reliable data retention for more than 10 years
  • Wide operating temperature range (-40°C to +85°C) for versatile applications

Advantages and Disadvantages

Advantages

  • Fast access time allows for quick data retrieval
  • Low-power consumption helps conserve energy
  • Synchronous interface simplifies system design and integration
  • Reliable data retention ensures long-term storage of critical information
  • Wide operating temperature range enables usage in various environments

Disadvantages

  • Limited memory density (2 Megabits) compared to higher-capacity alternatives
  • Parallel interface may require additional circuitry for compatibility with serial-based systems

Working Principles

The IDT71T75602S133PFI8 is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates at a voltage of 3.3V and utilizes a parallel interface for data transfer. The synchronous nature of the device ensures that data is transferred in sync with a clock signal, allowing for precise timing and reliable operation.

Detailed Application Field Plans

The IDT71T75602S133PFI8 can

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71T75602S133PFI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71T75602S133PFI8 in technical solutions:

  1. Question: What is IDT71T75602S133PFI8?
    Answer: IDT71T75602S133PFI8 is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71T75602S133PFI8?
    Answer: The IDT71T75602S133PFI8 has a capacity of 256K x 36 bits, which means it can store 256 kilobits of data organized into 36-bit words.

  3. Question: What is the operating voltage range for IDT71T75602S133PFI8?
    Answer: The operating voltage range for IDT71T75602S133PFI8 is typically between 3.135V and 3.465V.

  4. Question: What is the maximum clock frequency supported by IDT71T75602S133PFI8?
    Answer: IDT71T75602S133PFI8 supports a maximum clock frequency of 133 MHz.

  5. Question: Can IDT71T75602S133PFI8 be used in industrial applications?
    Answer: Yes, IDT71T75602S133PFI8 is suitable for use in industrial applications due to its wide operating temperature range and robust design.

  6. Question: Does IDT71T75602S133PFI8 support multiple read and write operations simultaneously?
    Answer: Yes, IDT71T75602S133PFI8 supports simultaneous read and write operations on different memory locations.

  7. Question: What is the power consumption of IDT71T75602S133PFI8?
    Answer: The power consumption of IDT71T75602S133PFI8 depends on various factors such as operating frequency and data access patterns. Please refer to the datasheet for detailed power specifications.

  8. Question: Can IDT71T75602S133PFI8 be used in battery-powered devices?
    Answer: Yes, IDT71T75602S133PFI8 can be used in battery-powered devices as it has low power consumption and supports power-saving features.

  9. Question: Does IDT71T75602S133PFI8 have built-in error correction capabilities?
    Answer: No, IDT71T75602S133PFI8 does not have built-in error correction capabilities. However, external error correction techniques can be implemented if required.

  10. Question: What are some typical applications of IDT71T75602S133PFI8?
    Answer: IDT71T75602S133PFI8 is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance computing applications that require fast and reliable memory access.

Please note that these answers are general and may vary depending on specific requirements and use cases. It's always recommended to refer to the official documentation and datasheets for accurate and up-to-date information.