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IDT71T75602S100PFGI8

IDT71T75602S100PFGI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed performance
    • Large storage capacity
    • Low power consumption
  • Package: FG (Fine-pitch Ball Grid Array)
  • Essence: Non-volatile memory
  • Packaging/Quantity: Individual units per package

Specifications

  • Model Number: IDT71T75602S100PFGI8
  • Memory Type: Static Random Access Memory (SRAM)
  • Capacity: 2 Megabits (256K x 8)
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Pin Count: 100 pins

Detailed Pin Configuration

The IDT71T75602S100PFGI8 has a total of 100 pins, each serving a specific purpose in the functioning of the device. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. GND
  35. DQ0
  36. DQ1
  37. DQ2
  38. DQ3
  39. DQ4
  40. DQ5
  41. DQ6
  42. DQ7
  43. DQ8
  44. DQ9
  45. DQ10
  46. DQ11
  47. DQ12
  48. DQ13
  49. DQ14
  50. DQ15
  51. DQ16
  52. DQ17
  53. DQ18
  54. DQ19
  55. DQ20
  56. DQ21
  57. DQ22
  58. DQ23
  59. DQ24
  60. DQ25
  61. DQ26
  62. DQ27
  63. DQ28
  64. DQ29
  65. DQ30
  66. DQ31
  67. WE#
  68. OE#
  69. CE#
  70. UB#
  71. LB#
  72. VSSQ
  73. VCCQ
  74. NC
  75. NC
  76. NC
  77. NC
  78. NC
  79. NC
  80. NC
  81. NC
  82. NC
  83. NC
  84. NC
  85. NC
  86. NC
  87. NC
  88. NC
  89. NC
  90. NC
  91. NC
  92. NC
  93. NC
  94. NC
  95. NC
  96. NC
  97. NC
  98. NC
  99. NC
  100. NC

Functional Features

  • High-speed access and data transfer
  • Non-volatile memory retains data even when power is disconnected
  • Low power consumption for energy efficiency
  • Easy integration into existing circuitry
  • Reliable performance and durability

Advantages

  • Fast access time allows for quick data retrieval
  • Large storage capacity accommodates a wide range of applications
  • Low power consumption reduces energy costs and extends battery life
  • Non-volatile memory ensures data integrity during power interruptions
  • Versatile interface supports seamless integration with various systems

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited scalability beyond the specified capacity
  • Susceptible to electromagnetic interference (EMI)
  • Requires careful handling and static protection measures

Working Principles

The IDT71T75602S100PFGI8 is a static random access memory (SRAM) device. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a matrix of rows and columns, allowing for efficient read and write operations. When an address is provided, the corresponding data can be accessed or modified.

Detailed Application Field Plans

The IDT71T75602S100PFGI8 is widely used in various electronic

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71T75602S100PFGI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71T75602S100PFGI8 in technical solutions:

  1. Question: What is IDT71T75602S100PFGI8?
    Answer: IDT71T75602S100PFGI8 is a specific model of synchronous SRAM (Static Random Access Memory) integrated circuit.

  2. Question: What is the capacity of IDT71T75602S100PFGI8?
    Answer: The IDT71T75602S100PFGI8 has a capacity of 4 Megabits (Mbit).

  3. Question: What is the operating voltage range for IDT71T75602S100PFGI8?
    Answer: The operating voltage range for IDT71T75602S100PFGI8 is typically between 3.0V and 3.6V.

  4. Question: What is the maximum clock frequency supported by IDT71T75602S100PFGI8?
    Answer: IDT71T75602S100PFGI8 supports a maximum clock frequency of 100 MHz.

  5. Question: What is the access time of IDT71T75602S100PFGI8?
    Answer: The access time of IDT71T75602S100PFGI8 is typically 10 ns.

  6. Question: Can IDT71T75602S100PFGI8 be used in industrial applications?
    Answer: Yes, IDT71T75602S100PFGI8 is suitable for use in industrial applications due to its wide operating temperature range and robust design.

  7. Question: Does IDT71T75602S100PFGI8 support multiple read and write operations simultaneously?
    Answer: Yes, IDT71T75602S100PFGI8 supports multiple read and write operations simultaneously, making it suitable for high-performance applications.

  8. Question: What is the package type of IDT71T75602S100PFGI8?
    Answer: IDT71T75602S100PFGI8 comes in a 100-pin Fine-Pitch Ball Grid Array (FBGA) package.

  9. Question: Can IDT71T75602S100PFGI8 be used in battery-powered devices?
    Answer: Yes, IDT71T75602S100PFGI8 can be used in battery-powered devices as it operates within a low voltage range and has low power consumption.

  10. Question: Is IDT71T75602S100PFGI8 compatible with standard memory interfaces?
    Answer: Yes, IDT71T75602S100PFGI8 is compatible with standard memory interfaces such as synchronous burst mode and pipelined read/write operations.

Please note that these answers are based on general information about the IDT71T75602S100PFGI8 and may vary depending on specific application requirements.