IDT71T75602S100PFGI

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71T75602S100PFGI is a high-performance synchronous static random-access memory (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable data retention - Easy integration into existing circuitry

Package: The IDT71T75602S100PFGI is available in a 100-pin plastic quad flat package (PQFP), which provides mechanical protection and facilitates easy installation on printed circuit boards (PCBs).

Essence: This IC serves as a vital component in electronic devices, enabling efficient data storage and retrieval operations.

Packaging/Quantity: The IDT71T75602S100PFGI is typically sold in reels containing a quantity of 250 units per reel.

Specifications

• Memory Type: Synchronous SRAM
• Organization: 2M x 36 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Standby Current: 5 mA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71T75602S100PFGI features a total of 100 pins, each serving a specific function within the integrated circuit. The detailed pin configuration is as follows:

(Pin Number - Pin Name - Function) 1 - VDD - Power Supply 2 - VSS - Ground 3 - A0-A20 - Address Inputs 4 - DQ0-DQ35 - Data Inputs/Outputs 5 - WE - Write Enable 6 - OE - Output Enable 7 - CE - Chip Enable 8 - UB/LB - Upper Byte/Lower Byte Control 9 - CLK - Clock Input 10-35 - Reserved Pins 36-100 - Additional Address, Data, and Control Pins

Functional Features

The IDT71T75602S100PFGI offers several functional features that enhance its performance and usability:

1. High-Speed Operation: The synchronous design allows for fast data access and transfer, making it suitable for applications requiring real-time processing.

2. Low Power Consumption: The IC incorporates power-saving features, minimizing energy consumption and extending battery life in portable devices.

3. Large Storage Capacity: With a capacity of 2M x 36 bits, the IDT71T75602S100PFGI provides ample space for storing critical data and instructions.

4. Reliable Data Retention: The SRAM technology ensures data integrity even during power interruptions or system failures.

5. Easy Integration: The IC is designed to seamlessly integrate into existing circuitry, simplifying the overall system design process.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low power consumption prolongs battery life. - Large storage capacity accommodates extensive data requirements. - Reliable data retention ensures data integrity. - Easy integration reduces design complexity.

Disadvantages: - Relatively higher cost compared to other memory technologies. - Limited scalability beyond the specified storage capacity.

Working Principles

The IDT71T75602S100PFGI operates based on the principles of synchronous SRAM. It utilizes a clock signal to synchronize data transfers between the memory array and external devices. When enabled, the IC responds to address inputs by retrieving or storing data from/to the corresponding memory location. The write enable (WE) and output enable (OE) signals control the read and write operations, respectively.

Detailed Application Field Plans

The IDT71T75602S100PFGI finds applications in various fields, including:

1. Telecommunications: Used in networking equipment, routers, and switches for high-speed data buffering and caching.

2. Embedded Systems: Integrated into microcontrollers and digital signal processors (DSPs) to provide fast on-chip memory for program storage and data manipulation.

3. Automotive Electronics: Employed in automotive control systems, such as engine management units and advanced driver-assistance systems (ADAS), for reliable data storage and processing.

4. Industrial Automation: Utilized in programmable logic controllers (PLCs) and robotics for efficient data handling and real-time control.

Detailed and Complete Alternative Models

1. IDT71V416: A 4M x 16-bit synchronous SRAM with similar characteristics and package options.
2. Cypress CY7C1041: A 1M x 4-bit synchronous SRAM offering lower power consumption and a smaller package size.
3. Micron MT45W8: An 8M x 32-bit synchronous SRAM featuring higher storage capacity and extended temperature range options.

These alternative