IDT, Integrated Device Technology Inc
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
IDT71T75602S100PFG
Zobrazit detail DataSheets

IDT71T75602S100PFG

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed operation
    • Large storage capacity
    • Low power consumption
  • Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
  • Essence: Non-volatile memory
  • Packaging/Quantity: Individually packaged, quantity varies based on supplier

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Density: 2 Megabits (256K x 8)
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: More than 20 years
  • Interface: Parallel
  • Pin Count: 100 pins

Detailed Pin Configuration

The IDT71T75602S100PFG has a total of 100 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. GND
  11. A8
  12. A9
  13. A10
  14. A11
  15. A12
  16. A13
  17. A14
  18. A15
  19. OE#
  20. CE#
  21. WE#
  22. I/O0
  23. I/O1
  24. I/O2
  25. I/O3
  26. I/O4
  27. I/O5
  28. I/O6
  29. I/O7
  30. VCC
  31. I/O8
  32. I/O9
  33. I/O10
  34. I/O11
  35. I/O12
  36. I/O13
  37. I/O14
  38. I/O15
  39. VCC
  40. I/O16
  41. I/O17
  42. I/O18
  43. I/O19
  44. I/O20
  45. I/O21
  46. I/O22
  47. I/O23
  48. VCC
  49. I/O24
  50. I/O25
  51. I/O26
  52. I/O27
  53. I/O28
  54. I/O29
  55. I/O30
  56. I/O31
  57. VCC
  58. I/O32
  59. I/O33
  60. I/O34
  61. I/O35
  62. I/O36
  63. I/O37
  64. I/O38
  65. I/O39
  66. VCC
  67. I/O40
  68. I/O41
  69. I/O42
  70. I/O43
  71. I/O44
  72. I/O45
  73. I/O46
  74. I/O47
  75. VCC
  76. I/O48
  77. I/O49
  78. I/O50
  79. I/O51
  80. I/O52
  81. I/O53
  82. I/O54
  83. I/O55
  84. VCC
  85. I/O56
  86. I/O57
  87. I/O58
  88. I/O59
  89. I/O60
  90. I/O61
  91. I/O62
  92. I/O63
  93. VCC
  94. A16
  95. A17
  96. A18
  97. A19
  98. A20
  99. A21
  100. VCC

Functional Features

  • High-speed operation allows for quick data access.
  • Large storage capacity of 2 Megabits provides ample memory space.
  • Low power consumption ensures efficient energy usage.

Advantages and Disadvantages

Advantages: - Fast access time enables rapid data retrieval. - Non-volatile memory retains data even when power is lost. - Parallel interface allows for easy integration with other components.

Disadvantages: - Limited storage capacity compared to newer memory technologies. - Higher power consumption compared to some low-power memory alternatives.

Working Principles

The IDT71T75602S100PFG is a static random access memory (SRAM) device. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized in a matrix, with each cell storing one bit of data. Accessing data involves providing the appropriate address to select the desired memory location and enabling the read or write operation.

Detailed Application Field Plans

The IDT71T75602S100PFG can be

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71T75602S100PFG v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71T75602S100PFG in technical solutions:

  1. Q: What is IDT71T75602S100PFG? A: IDT71T75602S100PFG is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71T75602S100PFG? A: The IDT71T75602S100PFG has a capacity of 256K x 36 bits, which means it can store 256 kilobits of data organized into 36-bit words.

  3. Q: What is the operating voltage range for IDT71T75602S100PFG? A: The operating voltage range for IDT71T75602S100PFG is typically between 3.0V and 3.6V.

  4. Q: What is the maximum clock frequency supported by IDT71T75602S100PFG? A: The maximum clock frequency supported by IDT71T75602S100PFG is 100 MHz.

  5. Q: Can IDT71T75602S100PFG be used in industrial applications? A: Yes, IDT71T75602S100PFG is suitable for use in industrial applications due to its wide operating temperature range and robust design.

  6. Q: Does IDT71T75602S100PFG support multiple read and write operations simultaneously? A: Yes, IDT71T75602S100PFG supports simultaneous read and write operations on different memory locations.

  7. Q: Is IDT71T75602S100PFG compatible with other SRAM devices? A: Yes, IDT71T75602S100PFG is compatible with other SRAM devices that use a similar interface and operating voltage.

  8. Q: Can IDT71T75602S100PFG be used in battery-powered devices? A: Yes, IDT71T75602S100PFG can be used in battery-powered devices as it operates within the typical voltage range of such devices.

  9. Q: What are the typical applications of IDT71T75602S100PFG? A: IDT71T75602S100PFG is commonly used in networking equipment, telecommunications systems, and high-performance computing applications.

  10. Q: Does IDT71T75602S100PFG have any built-in error correction capabilities? A: No, IDT71T75602S100PFG does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

Please note that these answers are general and may vary depending on the specific requirements and implementation of the technical solution.