Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
IDT71T75602S100PF8

IDT71T75602S100PF8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 100-pin plastic quad flat pack (PQFP)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Sold individually in a standard package

Specifications

  • Memory Type: Synchronous SRAM
  • Memory Size: 2 Megabits (256K x 8)
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 20 years
  • Package Dimensions: 14mm x 20mm x 2.5mm

Pin Configuration

The IDT71T75602S100PF8 has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. VDD
  12. A0
  13. A1
  14. A2
  15. A3
  16. A4
  17. A5
  18. A6
  19. A7
  20. A8
  21. A9
  22. A10
  23. A11
  24. A12
  25. A13
  26. A14
  27. A15
  28. A16
  29. A17
  30. A18
  31. A19
  32. A20
  33. A21
  34. A22
  35. A23
  36. A24
  37. A25
  38. A26
  39. A27
  40. A28
  41. A29
  42. A30
  43. A31
  44. A32
  45. A33
  46. A34
  47. A35
  48. A36
  49. A37
  50. A38
  51. A39
  52. A40
  53. A41
  54. A42
  55. A43
  56. A44
  57. A45
  58. A46
  59. A47
  60. A48
  61. A49
  62. A50
  63. A51
  64. A52
  65. A53
  66. A54
  67. A55
  68. A56
  69. A57
  70. A58
  71. A59
  72. A60
  73. A61
  74. A62
  75. A63
  76. A64
  77. A65
  78. A66
  79. A67
  80. A68
  81. A69
  82. A70
  83. A71
  84. A72
  85. A73
  86. A74
  87. A75
  88. A76
  89. A77
  90. A78
  91. A79
  92. A80
  93. A81
  94. A82
  95. A83
  96. A84
  97. A85
  98. A86
  99. A87
  100. VSSQ

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption ensures efficient energy usage.
  • Synchronous design enables synchronized data transfers.
  • Reliable data retention for extended periods.
  • Easy integration into various electronic systems.

Advantages and Disadvantages

Advantages: - Fast access time improves overall system performance. - Low power consumption reduces energy costs. - Synchronous design simplifies system timing requirements. - Reliable data retention ensures data integrity. - Versatile integration options due to standard package format.

Disadvantages: - Limited memory size compared to other storage devices. - Higher cost per bit compared to larger memory devices. - Requires proper handling and static discharge precautions during installation.

Working Principles

The IDT71T75602S100PF8 is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates at a voltage of 3.3V and provides a fast access time of 10 ns. The synchronous design allows for synchronized data transfers, ensuring efficient communication with the rest of the system. The memory retains data even when power is removed, making it suitable for applications requiring non-volatile storage.

Detailed Application Field Plans

The IDT71T75602S100PF8 can be used in various applications, including:

1

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71T75602S100PF8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71T75602S100PF8 in technical solutions:

  1. Q: What is IDT71T75602S100PF8? A: IDT71T75602S100PF8 is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71T75602S100PF8? A: IDT71T75602S100PF8 has a capacity of 256 kilobits (Kb), which is equivalent to 32 kilobytes (KB).

  3. Q: What is the operating voltage range for IDT71T75602S100PF8? A: The operating voltage range for IDT71T75602S100PF8 is typically between 4.5V and 5.5V.

  4. Q: What is the access time of IDT71T75602S100PF8? A: IDT71T75602S100PF8 has an access time of 10 nanoseconds (ns), meaning it takes approximately 10 ns to read or write data.

  5. Q: Can IDT71T75602S100PF8 be used in battery-powered devices? A: Yes, IDT71T75602S100PF8 can be used in battery-powered devices as long as the operating voltage requirements are met.

  6. Q: Does IDT71T75602S100PF8 support multiple read/write operations simultaneously? A: No, IDT71T75602S100PF8 is a synchronous SRAM and does not support simultaneous read/write operations.

  7. Q: What is the package type of IDT71T75602S100PF8? A: IDT71T75602S100PF8 is available in a 100-pin plastic quad flat pack (PQFP) package.

  8. Q: Can IDT71T75602S100PF8 be used in industrial temperature environments? A: Yes, IDT71T75602S100PF8 is designed to operate in industrial temperature ranges, typically between -40°C and +85°C.

  9. Q: Does IDT71T75602S100PF8 have any built-in error correction capabilities? A: No, IDT71T75602S100PF8 does not have built-in error correction capabilities. It is a standard SRAM.

  10. Q: What are some typical applications of IDT71T75602S100PF8? A: IDT71T75602S100PF8 can be used in various applications such as networking equipment, telecommunications systems, and embedded systems where fast and reliable data storage is required.

Please note that the answers provided here are general and may vary depending on specific requirements or datasheet specifications.