Category: Integrated Circuit (IC)
Use: The IDT71T016SA20PHI is a high-performance synchronous static random access memory (SRAM) designed for use in various electronic devices and systems. It provides fast and reliable data storage and retrieval capabilities.
Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Synchronous interface - Easy integration into existing systems
Package: The IDT71T016SA20PHI is available in a 44-pin plastic leaded chip carrier (PLCC) package, which ensures durability and protection of the integrated circuit.
Essence: This IC serves as a crucial component in electronic devices by providing temporary storage for data during processing. It enables efficient and rapid data access, contributing to the overall performance of the system.
Packaging/Quantity: Each package contains one IDT71T016SA20PHI IC.
The IDT71T016SA20PHI features a 44-pin PLCC package with the following pin configuration:

Advantages: - High-speed operation enables quick data access. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates a wide range of applications. - Synchronous interface simplifies integration into existing systems.
Disadvantages: - Limited operating temperature range may restrict certain applications. - Higher cost compared to alternative memory technologies.
The IDT71T016SA20PHI operates based on the principles of synchronous SRAM. It utilizes a clock signal to synchronize its internal operations with the system. When a read or write operation is initiated, the IC accesses the requested data from its memory cells and transfers it to/from the external system.
The IDT71T016SA20PHI finds application in various electronic systems, including but not limited to: 1. Computer motherboards 2. Networking equipment 3. Telecommunications devices 4. Industrial control systems 5. Automotive electronics
For users seeking alternatives to the IDT71T016SA20PHI, the following models can be considered: 1. Micron MT48LC16M16A2P-75IT 2. Samsung K6R1016V1D-JC10 3. Cypress CY62167EV30LL-45ZSXI
These models offer similar specifications and functionality, providing options for different design requirements.
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Sure! Here are 10 common questions and answers related to the application of IDT71T016SA20PHI in technical solutions:
Q: What is IDT71T016SA20PHI? A: IDT71T016SA20PHI is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71T016SA20PHI? A: The IDT71T016SA20PHI has a capacity of 16 megabits (2 megabytes) organized as 2,097,152 words by 8 bits.
Q: What is the operating voltage range for IDT71T016SA20PHI? A: The operating voltage range for IDT71T016SA20PHI is typically between 4.5V and 5.5V.
Q: What is the access time of IDT71T016SA20PHI? A: The access time of IDT71T016SA20PHI is 20 nanoseconds (ns).
Q: Can IDT71T016SA20PHI be used in battery-powered devices? A: Yes, IDT71T016SA20PHI can be used in battery-powered devices as long as the operating voltage requirements are met.
Q: Is IDT71T016SA20PHI compatible with other SRAMs? A: Yes, IDT71T016SA20PHI is compatible with other SRAMs that have similar specifications and interface requirements.
Q: What is the package type for IDT71T016SA20PHI? A: IDT71T016SA20PHI is available in a 44-pin plastic thin quad flat pack (TQFP) package.
Q: Can IDT71T016SA20PHI be used in high-speed applications? A: Yes, IDT71T016SA20PHI can be used in high-speed applications as it has a relatively fast access time of 20 ns.
Q: Does IDT71T016SA20PHI support simultaneous read and write operations? A: No, IDT71T016SA20PHI does not support simultaneous read and write operations. It follows a standard SRAM read and write cycle.
Q: What are some typical applications for IDT71T016SA20PHI? A: Some typical applications for IDT71T016SA20PHI include networking equipment, telecommunications systems, industrial automation, and embedded systems.
Please note that the answers provided here are general and may vary depending on specific requirements and use cases.