IDT71T016SA20BFI

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71T016SA20BFI is a high-speed static random access memory (SRAM) IC. It is commonly used in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Non-volatile memory - Easy integration into existing circuitry

Package: The IDT71T016SA20BFI is available in a 48-pin plastic ball grid array (PBGA) package. This package provides excellent thermal performance and mechanical stability, ensuring the reliability of the IC.

Essence: The essence of the IDT71T016SA20BFI lies in its ability to store and retrieve data quickly and efficiently, making it an essential component in many electronic devices.

Packaging/Quantity: The IDT71T016SA20BFI is typically sold in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Access Time: 20 nanoseconds
• Operating Voltage: 3.3V
• Standby Current: 10 microamps (typical)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 20 years

Detailed Pin Configuration

The IDT71T016SA20BFI has a total of 48 pins, each serving a specific function. Here is a detailed pin configuration:

1. VCC - Power supply voltage
2. GND - Ground reference
3. A0-A16 - Address inputs
4. DQ0-DQ7 - Data inputs/outputs
5. CE1, CE2 - Chip enable inputs
6. OE - Output enable input
7. WE - Write enable input
8. UB/LB - Upper byte/lower byte control
9. NC - No connection (reserved for future use)
10. RAS - Row address strobe
11. CAS - Column address strobe
12. CLK - Clock input

(Note: This is a simplified pin configuration. Please refer to the datasheet for a complete and accurate pinout diagram.)

Functional Features

• High-speed operation allows for fast data access and retrieval.
• Low power consumption ensures efficient energy usage.
• Non-volatile memory retains data even when power is disconnected.
• Easy integration into existing circuitry due to standard interface compatibility.

Advantages and Disadvantages

Advantages: - Fast access time enables quick data processing. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates a wide range of applications. - Non-volatile memory ensures data retention without the need for constant power supply.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per unit compared to alternative memory options.

Working Principles

The IDT71T016SA20BFI operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain their state as long as power is supplied. The address inputs are used to select a specific memory location, while the data inputs/outputs facilitate the transfer of information between the IC and the external system.

Detailed Application Field Plans

The IDT71T016SA20BFI finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

• IDT71V016SA20BFI: Similar to the IDT71T016SA20BFI, but operates at a lower voltage (2.5V).
• IDT71T016SA25BFI: Similar to the IDT71T016SA20BFI, but with a slightly slower access time (25 nanoseconds).
• IDT71T032SA20BFI: Double the storage capacity of the IDT71T016SA20BFI (2 Megabits).

(Note: This is not an exhaustive list of alternative models. Please refer to the manufacturer's catalog for a complete range of options.)

In conclusion, the IDT71T016SA20BFI is a high-speed SRAM IC that offers fast data access, low power consumption, and large storage capacity. Its versatility and compatibility make it suitable for various electronic applications. While it has certain limitations, its advantages outweigh the disadvantages, making it a reliable choice for memory-intensive systems.