IDT, Integrated Device Technology Inc
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IDT71T016SA20BF8
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IDT71T016SA20BF8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed operation
    • Low power consumption
    • Large storage capacity
  • Package: BF8 package
  • Essence: Static Random Access Memory (SRAM)
  • Packaging/Quantity: Individual units in a tray or reel

Specifications

  • Memory Size: 16 Megabits (2 Megabytes)
  • Operating Voltage: 3.3V
  • Access Time: 20 nanoseconds
  • Organization: 2M x 8 bits
  • Data Retention: Greater than 10 years
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71T016SA20BF8 has a total of 48 pins, which are assigned as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. OE#
  19. CE#
  20. WE#
  21. I/O0
  22. I/O1
  23. I/O2
  24. I/O3
  25. I/O4
  26. I/O5
  27. I/O6
  28. I/O7
  29. GND
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed operation allows for quick data access.
  • Low power consumption ensures energy efficiency.
  • Large storage capacity of 16 Megabits accommodates extensive data.
  • Static memory technology eliminates the need for constant refreshing.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity meets the demands of data-intensive applications.

Disadvantages: - Relatively higher cost compared to other memory technologies. - Limited scalability beyond the specified memory size.

Working Principles

The IDT71T016SA20BF8 is a static random access memory (SRAM) device. It stores data using flip-flops, which retain their state as long as power is supplied. This eliminates the need for constant refreshing, resulting in faster access times compared to dynamic RAM (DRAM). The memory cells are organized in a 2M x 8-bit configuration, allowing simultaneous read and write operations.

Detailed Application Field Plans

The IDT71T016SA20BF8 is commonly used in various applications, including:

  1. Computer systems
  2. Networking equipment
  3. Telecommunications devices
  4. Industrial control systems
  5. Automotive electronics

Its high-speed operation and large storage capacity make it suitable for applications that require fast and reliable data access.

Detailed and Complete Alternative Models

  1. IDT71V016SA20BF8: Similar to IDT71T016SA20BF8 but operates at a lower voltage of 2.5V.
  2. IDT71T032SA20BF8: Double the memory size of IDT71T016SA20BF8, offering 32 Megabits of storage capacity.
  3. IDT71T064SA20BF8: Four times the memory size of IDT71T016SA20BF8, providing 64 Megabits of storage capacity.

These alternative models offer different memory sizes or operating voltages to cater to specific application requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71T016SA20BF8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71T016SA20BF8 in technical solutions:

  1. Question: What is IDT71T016SA20BF8?
    Answer: IDT71T016SA20BF8 is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71T016SA20BF8?
    Answer: IDT71T016SA20BF8 has a capacity of 16 megabits (2 megabytes) organized as 2,097,152 words by 8 bits.

  3. Question: What is the operating voltage range for IDT71T016SA20BF8?
    Answer: The operating voltage range for IDT71T016SA20BF8 is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71T016SA20BF8?
    Answer: IDT71T016SA20BF8 has an access time of 20 nanoseconds (ns), which refers to the time it takes to read or write data.

  5. Question: Can IDT71T016SA20BF8 be used in battery-powered devices?
    Answer: Yes, IDT71T016SA20BF8 can be used in battery-powered devices as long as the operating voltage range is within the device's power supply capabilities.

  6. Question: Is IDT71T016SA20BF8 compatible with standard memory interfaces?
    Answer: Yes, IDT71T016SA20BF8 is designed to be compatible with industry-standard memory interfaces such as asynchronous SRAM and burst mode SRAM.

  7. Question: Does IDT71T016SA20BF8 support multiple read and write operations simultaneously?
    Answer: No, IDT71T016SA20BF8 is a synchronous SRAM and does not support simultaneous read and write operations.

  8. Question: Can IDT71T016SA20BF8 be used in high-speed applications?
    Answer: Yes, IDT71T016SA20BF8 is designed for high-speed operation and can be used in applications that require fast access times.

  9. Question: Does IDT71T016SA20BF8 have any built-in error correction capabilities?
    Answer: No, IDT71T016SA20BF8 does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

  10. Question: What are some typical applications of IDT71T016SA20BF8?
    Answer: IDT71T016SA20BF8 is commonly used in networking equipment, telecommunications systems, industrial automation, and other embedded systems where high-speed and reliable memory is required.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.