IDT71T016SA15PHG8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 48-pin Thin Small Outline Package (TSOP)
• Essence: Provides high-performance data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 1 Megabit (128K x 8 bits)
• Operating Voltage: 3.3V
• Access Time: 15 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 10 years
• Standby Current: Less than 5mA
• Package Dimensions: 12.8mm x 20.4mm x 1.0mm

Pin Configuration

The IDT71T016SA15PHG8 IC has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A11
3. A9
4. A8
5. A13
6. A14
7. A12
8. A7
9. A6
10. A5
11. A4
12. A3
13. A2
14. A1
15. A0
16. GND
17. I/O0
18. I/O1
19. I/O2
20. I/O3
21. I/O4
22. I/O5
23. I/O6
24. I/O7
25. WE#
26. OE#
27. CE#
28. BYTE#
29. A10
30. A15
31. A16
32. A17
33. A18
34. A19
35. A20
36. A21
37. A22
38. A23
39. A24
40. A25
41. A26
42. A27
43. A28
44. A29
45. A30
46. A31
47. VCCQ
48. GND

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption ensures efficient energy usage.
• Synchronous design enables precise timing control.
• Static random-access memory technology provides non-volatile storage capabilities.
• Easy integration with various electronic devices due to standard interface protocols.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low standby current reduces power consumption. - Reliable data retention for extended periods. - Compact package size allows for space-efficient designs.

Disadvantages: - Limited memory capacity compared to newer generations of SRAM. - Higher cost per bit compared to other memory technologies. - Sensitivity to external noise and interference.

Working Principles

The IDT71T016SA15PHG8 operates as a synchronous static random-access memory (SRAM). It stores and retrieves data using an array of flip-flops, which retain their state as long as power is supplied. The memory cells are organized into rows and columns, with each cell storing one bit of information. Accessing the memory involves providing the appropriate address and control signals to select the desired row and column, allowing data to be read from or written to the specified location.

Detailed Application Field Plans

The IDT71T016SA15PHG8 is commonly used in various applications that require high-speed and low-power memory, such as:

1. Computer systems and servers
2. Networking equipment
3. Telecommunications devices
4. Industrial control systems
5. Automotive electronics
6. Medical devices
7. Consumer electronics

Detailed and Complete Alternative Models

• IDT71V016SA15PHG8: Similar to the IDT71T016SA15PHG8, but operates at a lower voltage of 2.5V.
• IDT71T016SA20PHG8: Offers a faster access time of 20 nanoseconds.
• IDT71T032SA15PHG8: Provides double the memory capacity with 2 Megabits (256K x 8 bits).
• IDT71T064SA15PHG8: Offers quadruple the memory capacity with 4 Megabits (512K x 8 bits).

These alternative models provide options with varying specifications to suit different application requirements.

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