IDT71T016SA15PHG

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: Plastic grid array (PGA)
• Essence: Stores and retrieves digital information in electronic systems
• Packaging/Quantity: Single unit per package

Specifications

• Memory Type: SRAM
• Organization: 1M x 16
• Access Time: 15ns
• Supply Voltage: 3.3V
• Operating Temperature: -40°C to +85°C
• Package Type: PGA
• Pin Count: 84

Detailed Pin Configuration

The IDT71T016SA15PHG has a total of 84 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. GND
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. A16
36. A17
37. A18
38. A19
39. A20
40. A21
41. A22
42. A23
43. A24
44. A25
45. A26
46. A27
47. A28
48. A29
49. A30
50. A31
51. A32
52. A33
53. A34
54. A35
55. A36
56. A37
57. A38
58. A39
59. A40
60. A41
61. A42
62. A43
63. A44
64. A45
65. A46
66. A47
67. A48
68. A49
69. A50
70. A51
71. A52
72. A53
73. A54
74. A55
75. A56
76. A57
77. A58
78. A59
79. A60
80. A61
81. A62
82. A63
83. WE#
84. OE#

Functional Features

• High-speed operation: The IDT71T016SA15PHG offers fast access times, allowing for efficient data retrieval.
• Low-power consumption: This SRAM device is designed to minimize power usage, making it suitable for battery-powered devices.
• Synchronous operation: The memory operates synchronously with the system clock, ensuring reliable data transfer.
• Easy integration: The PGA package and pin configuration facilitate easy integration into electronic systems.

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data access. - Low-power consumption prolongs battery life in portable devices. - Synchronous operation ensures reliable data transfer. - Easy integration due to the PGA package and pin configuration.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per bit compared to other memory devices.

Working Principles

The IDT71T016SA15PHG is a synchronous SRAM that stores and retrieves digital information using electronic circuits. It operates by storing data in a matrix of memory cells, with each cell representing a single bit of information. The memory cells are organized in a 1M x 16 configuration, allowing for the storage of 1 megabit (1 million bits) of data.

The memory device operates synchronously with the system clock, ensuring that data is transferred at the correct timing. When a read operation is initiated, the requested data is retrieved from the memory cells and made available on the output pins. Similarly, during a write operation, the input data is stored in the appropriate memory cells.

Detailed Application Field Plans

The IDT71T016SA15PHG is commonly used in various applications that require high-speed and low-power memory. Some potential application fields include:

1. Embedded Systems: The SRAM can be used as cache memory in microcontrollers and digital signal processors (DSPs), enhancing overall system performance.
2. Networking Equipment: The memory device can be