IDT71T016SA15PH8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
• Package: 48-pin Plastic Leaded Chip Carrier (PLCC)
• Essence: Provides high-performance data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Size: 16 Megabits (2 Megabytes)
• Organization: 2M x 8 bits
• Access Time: 15 nanoseconds
• Operating Voltage: 3.3 volts
• Operating Temperature: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5 mA
• Package Dimensions: 20mm x 20mm x 4.45mm

Pin Configuration

The IDT71T016SA15PH8 IC has a total of 48 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. Vcc
10. WE#
11. OE#
12. I/O0
13. I/O1
14. I/O2
15. I/O3
16. I/O4
17. I/O5
18. I/O6
19. I/O7
20. GND
21. A8
22. A9
23. A10
24. A11
25. A12
26. A13
27. A14
28. A15
29. Vcc
30. CE#
31. UB#
32. LB#
33. I/O8
34. I/O9
35. I/O10
36. I/O11
37. I/O12
38. I/O13
39. I/O14
40. I/O15
41. GND
42. A16
43. A17
44. A18
45. A19
46. A20
47. A21
48. A22

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and efficient data transfer.
• Static random access memory technology provides non-volatile storage capabilities.

Advantages and Disadvantages

Advantages: - High-speed performance enables fast data processing. - Low-power consumption extends battery life in portable devices. - Reliable and durable memory storage. - Compact package size allows for space-efficient integration into electronic systems.

Disadvantages: - Limited memory capacity compared to other storage technologies. - Relatively higher cost per unit compared to alternative memory options.

Working Principles

The IDT71T016SA15PH8 is a synchronous SRAM that operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The device uses a synchronous interface, where data transfers are synchronized with an external clock signal. This ensures reliable and accurate data exchange between the memory and the connected system.

Detailed Application Field Plans

The IDT71T016SA15PH8 IC is commonly used in various applications that require high-speed and low-power memory storage. Some of the potential application fields include:

1. Embedded Systems: Used as cache memory in microcontrollers and digital signal processors (DSPs).
2. Networking Equipment: Provides data buffering and packet storage capabilities in routers and switches.
3. Telecommunications: Used for buffering and temporary storage in communication systems.
4. Industrial Automation: Enables fast data processing and storage in control systems and robotics.
5. Automotive Electronics: Used for storing critical data in automotive control units and infotainment systems.

Detailed and Complete Alternative Models

1. IDT71V016SA: Similar to IDT71T016SA15PH8, but with a faster access time of 10 nanoseconds.
2. Cypress CY62167EV30: A comparable synchronous SRAM with a capacity of 16 Megabits and an access time of 30 nanoseconds.
3. Micron MT45W8MW16BGX: A high-speed synchronous SRAM with a capacity of 128 Megabits and an access time of 8 nanoseconds.

These alternative models offer similar functionality and can be considered as alternatives based on specific application requirements.

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