IDT71T016SA12PH

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
• Package: 44-pin Plastic Leaded Chip Carrier (PLCC)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in reels of 250 units

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Access Time: 12 nanoseconds
• Operating Voltage: 5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 50μA
• Power Dissipation: 1.2W (max)

Pin Configuration

The IDT71T016SA12PH has a total of 44 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. CE#
20. WE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. GND
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable data transfer.
• Easy integration into existing circuitry due to standard pin configuration.
• Supports simultaneous read and write operations.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low standby current prolongs battery life in portable devices. - Reliable performance ensures data integrity. - Standard package allows for easy replacement or upgrade.

Disadvantages: - Limited memory size compared to newer models. - Requires a 5V operating voltage, which may not be compatible with all systems. - Higher power dissipation compared to some low-power alternatives.

Working Principles

The IDT71T016SA12PH is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by synchronizing the input/output signals with an external clock signal. When the chip enable (CE#) and output enable (OE#) signals are active, the device can read or write data on the bidirectional I/O pins. The address lines (A0-A15) specify the memory location being accessed, while the write enable (WE#) signal determines whether data is written or read from the specified location.

Detailed Application Field Plans

The IDT71T016SA12PH is commonly used in various applications, including:

1. Computer Systems:

   • Cache memory in microprocessors.
   • Buffer memory in storage devices.
   • Data storage in networking equipment.

2. Communication Systems:

   • Data buffering in routers and switches.
   • Packet buffering in network interfaces.
   • Voice and data storage in telecommunication devices.

3. Industrial Control Systems:

   • Data storage in programmable logic controllers (PLCs).
   • Buffer memory in control units.
   • Real-time data processing in automation systems.

4. Consumer Electronics:

   • Image buffering in digital cameras.
   • Audio data storage in portable media players.
   • Program storage in gaming consoles.

Detailed and Complete Alternative Models

1. IDT71V016SA: Similar to IDT71T016SA12PH but operates at a faster access time of 10 nanoseconds.
2. IDT71T032SA: Double the memory size of IDT71T016SA12PH, offering 2 Megabits (256K x 8) of storage capacity.
3. IDT71T064SA: Quadruple the memory size of IDT71T016SA12PH, providing 4 Megabits (512K x 8) of storage capacity.
4. IDT71T128SA: Eight times the memory size of IDT71T016SA12PH, featuring 8 Megabits (1