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IDT71T016SA12BFI

IDT71T016SA12BFI

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
  • Package: BGA (Ball Grid Array)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Size: 1 Megabit (128K x 8)
  • Access Time: 12 ns
  • Operating Voltage: 3.3V
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Greater than 10 years
  • Interface: Parallel

Pin Configuration

The IDT71T016SA12BFI has a total of 44 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. CE1
  11. CE2
  12. WE
  13. OE
  14. I/O0
  15. I/O1
  16. I/O2
  17. I/O3
  18. I/O4
  19. I/O5
  20. I/O6
  21. I/O7
  22. GND
  23. NC
  24. A8
  25. A9
  26. A10
  27. A11
  28. A12
  29. A13
  30. A14
  31. A15
  32. A16
  33. A17
  34. A18
  35. A19
  36. A20
  37. A21
  38. A22
  39. A23
  40. NC
  41. VCC
  42. VCC
  43. GND
  44. GND

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption makes it suitable for battery-powered devices.
  • Synchronous design ensures reliable and synchronized data transfers.
  • Easy integration with other components due to its standard parallel interface.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption extends battery life in portable devices. - Reliable synchronous operation ensures accurate data transfer. - Compact BGA package offers space-saving benefits.

Disadvantages: - Limited memory size compared to newer SRAM technologies. - Parallel interface may not be compatible with certain modern systems. - Higher cost compared to alternative memory technologies.

Working Principles

The IDT71T016SA12BFI is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates by synchronizing the read and write operations with an external clock signal. When a read operation is initiated, the addressed memory location's contents are output on the I/O pins. During a write operation, data is written into the specified memory location.

Detailed Application Field Plans

The IDT71T016SA12BFI is commonly used in various applications, including:

  1. Embedded Systems: Provides fast and reliable data storage for microcontrollers and digital signal processors.
  2. Networking Equipment: Used as cache memory in routers, switches, and network appliances.
  3. Telecommunications: Enables high-speed data buffering in communication systems.
  4. Industrial Automation: Stores critical data in control systems and PLCs.
  5. Automotive Electronics: Used in automotive control units for storing configuration data and temporary variables.

Alternative Models

  1. IDT71V016SA: Similar specifications and pin configuration, but operates at a lower voltage (2.5V).
  2. Cypress CY7C1041DV: Offers the same memory size and access time, but with a different pin configuration.
  3. Samsung K6R1016C1D: Provides comparable specifications and pin configuration, suitable for similar applications.

These alternative models can be considered based on specific project requirements and availability.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71T016SA12BFI v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71T016SA12BFI in technical solutions:

  1. Question: What is IDT71T016SA12BFI?
    Answer: IDT71T016SA12BFI is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71T016SA12BFI?
    Answer: IDT71T016SA12BFI has a capacity of 16 megabits (2 megabytes) organized as 1,048,576 words by 16 bits.

  3. Question: What is the operating voltage range for IDT71T016SA12BFI?
    Answer: The operating voltage range for IDT71T016SA12BFI is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71T016SA12BFI?
    Answer: The access time of IDT71T016SA12BFI is 12 nanoseconds (ns), which refers to the time it takes to read or write data.

  5. Question: Can IDT71T016SA12BFI be used in industrial applications?
    Answer: Yes, IDT71T016SA12BFI is suitable for industrial applications as it operates within the specified temperature range of -40°C to +85°C.

  6. Question: Does IDT71T016SA12BFI support multiple chip enable signals?
    Answer: Yes, IDT71T016SA12BFI supports two chip enable (CE) signals, allowing for flexible memory organization and control.

  7. Question: What is the standby current consumption of IDT71T016SA12BFI?
    Answer: The standby current consumption of IDT71T016SA12BFI is typically less than 10 microamps (µA).

  8. Question: Can IDT71T016SA12BFI be used in battery-powered devices?
    Answer: Yes, IDT71T016SA12BFI's low standby current makes it suitable for battery-powered devices where power efficiency is crucial.

  9. Question: Does IDT71T016SA12BFI have built-in error correction capabilities?
    Answer: No, IDT71T016SA12BFI does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

  10. Question: What are some typical applications of IDT71T016SA12BFI?
    Answer: IDT71T016SA12BFI can be used in various applications such as networking equipment, telecommunications systems, industrial control systems, and embedded systems that require high-speed and reliable data storage.

Please note that the answers provided here are general and specific details may vary depending on the datasheet and technical specifications of IDT71T016SA12BFI.