IDT71P72804S200BQG

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-performance, low-power, synchronous static random-access memory (SRAM)
• Package: 200-ball BGA (Ball Grid Array)
• Essence: The IDT71P72804S200BQG is a high-speed SRAM designed for use in various applications that require fast and reliable data storage.
• Packaging/Quantity: The IDT71P72804S200BQG is typically sold in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Size: 4 Megabits (4Mb)
• Organization: 512K x 8 bits
• Operating Voltage: 2.5V - 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Standby Current: 1 μA (typical)
• Package Dimensions: 13mm x 13mm

Pin Configuration

The IDT71P72804S200BQG has a total of 200 pins arranged in a ball grid array (BGA) package. The pin configuration is as follows:

• Pins 1-100: Data Input/Output (DQ0-DQ7)
• Pins 101-108: Address Inputs (A0-A7)
• Pins 109-116: Chip Enable (CE, CE2, CE3, CE4)
• Pins 117-120: Output Enable (OE, OE2)
• Pins 121-124: Write Enable (WE, WE2)
• Pins 125-128: Byte Enable (BE0, BE1)
• Pins 129-132: Power Supply (VCC, VCCQ, VSS, VSSQ)
• Pins 133-200: No Connection (NC)

Functional Features

• High-speed operation with a maximum access time of 10 ns
• Low-power consumption in standby mode
• Synchronous operation for easy integration into various systems
• Byte-wide data access for efficient memory utilization
• Multiple chip enable and output enable pins for flexible control
• Data retention for up to 10 years without power supply

Advantages and Disadvantages

Advantages: - High-performance SRAM suitable for demanding applications - Low-power consumption in standby mode helps conserve energy - Synchronous operation simplifies system design and integration - Multiple chip enable and output enable pins offer flexibility in controlling the memory device

Disadvantages: - Relatively small memory size compared to other modern memory devices - Limited temperature range (-40°C to +85°C) may not be suitable for extreme environments

Working Principles

The IDT71P72804S200BQG is based on synchronous static random-access memory (SRAM) technology. It stores data in a volatile manner, meaning that the data is lost when power is removed. The memory operates synchronously with the system clock, allowing for fast and reliable data access. The chip enable, output enable, and write enable pins control the read and write operations, while the address inputs specify the location of the data to be accessed.

Detailed Application Field Plans

The IDT71P72804S200BQG can be used in various applications that require high-speed and low-power memory storage. Some potential application fields include:

1. Networking equipment: Used as cache memory in routers, switches, and network appliances to improve data processing speed.
2. Telecommunications systems: Utilized in base stations, switches, and communication devices for storing critical data and facilitating fast data access.
3. Industrial automation: Integrated into control systems, PLCs (Programmable Logic Controllers), and robotics for efficient data storage and retrieval.
4. Automotive electronics: Employed in automotive control units, infotainment systems, and advanced driver-assistance systems (ADAS) to store and process real-time data.
5. Consumer electronics: Used in gaming consoles, set-top boxes, and digital TVs for high-speed data buffering and storage.

Detailed and Complete Alternative Models

1. IDT71V416: 4 Megabit (512K x 8) CMOS SRAM with asynchronous operation.
2. IS61LV256: 256K x 8 Low-power CMOS Static RAM with asynchronous operation.
3. CY62128: 128K x 8 Static RAM with low standby current and battery backup capability.
4. MT45W8MW16: 128M x 16 Mobile LPDDR2 SDRAM with low power consumption and high-speed operation.
5. AT25DF041A: