IDT71P71804S200BQG

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 200-ball BGA (Ball Grid Array)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Single unit per package

Specifications

• Model: IDT71P71804S200BQG
• Technology: CMOS (Complementary Metal-Oxide-Semiconductor)
• Organization: 1M x 18 bits
• Operating Voltage: 2.5V
• Access Time: 10 ns
• Standby Current: 50 µA
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 20 years

Detailed Pin Configuration

The IDT71P71804S200BQG has a total of 200 pins. The pin configuration is as follows:

• Pins 1-36: Address Inputs (A0-A17)
• Pins 37-54: Data Inputs/Outputs (DQ0-DQ17)
• Pins 55-58: Chip Enable (CE, CE2, CE3, CE4)
• Pins 59-62: Output Enable (OE, OE2, OE3, OE4)
• Pins 63-66: Write Enable (WE, WE2, WE3, WE4)
• Pins 67-70: Byte Enable (BE0, BE1, BE2, BE3)
• Pins 71-74: Clock Inputs (CLK, CLK2, CLK3, CLK4)
• Pins 75-78: Power Supply (VDD, VDDQ, VSS, VSSQ)
• Pins 79-200: Not used

Functional Features

• High-speed operation allows for quick data access and transfer.
• Low-power consumption ensures efficient energy usage.
• Synchronous design enables synchronized data transfers with external devices.
• Static random-access memory technology provides non-volatile storage capabilities.
• Reliable performance and data integrity due to error correction techniques.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption reduces energy costs. - Synchronous design simplifies system integration. - Error correction techniques ensure data reliability.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to alternative memory options. - Sensitivity to environmental conditions, such as temperature and voltage fluctuations.

Working Principles

The IDT71P71804S200BQG operates based on the principles of synchronous static random-access memory. It stores and retrieves data using a matrix of memory cells organized in a 1M x 18 configuration. The device utilizes CMOS technology, which allows for high-speed operation and low power consumption. The memory cells retain their stored information even when power is removed, ensuring data persistence.

Detailed Application Field Plans

The IDT71P71804S200BQG is commonly used in various applications that require fast and reliable data storage and retrieval. Some potential application fields include:

1. Telecommunications: Used in networking equipment, routers, and switches for buffering and caching purposes.
2. Industrial Automation: Employed in control systems and programmable logic controllers (PLCs) for storing critical data and program code.
3. Automotive Electronics: Utilized in automotive control units and infotainment systems for data caching and temporary storage.
4. Medical Devices: Integrated into medical imaging equipment and patient monitoring systems for rapid data processing and storage.
5. Aerospace and Defense: Deployed in avionics systems, radar systems, and military communication devices for high-speed data handling.

Detailed and Complete Alternative Models

1. Micron MT48LC16M16A2P-75
2. Samsung K6R4016V1D-UI10
3. Cypress CY7C1041DV33-10ZSXI
4. Renesas R1LV0416DSB-5SI
5. Nanya NT5DS16M16CS-5T

These alternative models offer similar functionality and specifications to the IDT71P71804S200BQG, providing options for different design requirements and availability in the market.

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