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IDT7164L20YI8

IDT7164L20YI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • Low-power CMOS technology
    • 64K (8K x 8) static RAM
    • High-speed access time
    • Single 5V power supply
    • Industry-standard pinout
  • Package: 28-pin plastic DIP (Dual Inline Package)
  • Essence: The IDT7164L20YI8 is a high-performance static RAM designed for various applications requiring low-power and high-speed memory.

Specifications

  • Memory Size: 64K (8K x 8 bits)
  • Access Time: 20ns
  • Operating Voltage: 5V
  • Operating Temperature: -40°C to +85°C
  • Package Type: 28-pin DIP
  • Pin Count: 28
  • Technology: CMOS

Detailed Pin Configuration

The IDT7164L20YI8 has a total of 28 pins. The pin configuration is as follows:

  1. Chip Enable (CE)
  2. Output Enable (OE)
  3. Write Enable (WE)
  4. Address Inputs (A0-A14)
  5. Data Inputs/Outputs (DQ0-DQ7)
  6. Vcc (+5V Power Supply)
  7. Ground (GND)

Functional Features

  • High-speed access time allows for quick data retrieval.
  • Low-power CMOS technology ensures efficient power consumption.
  • Industry-standard pinout enables easy integration into existing systems.
  • Single 5V power supply simplifies the power requirements.
  • Reliable performance in a wide range of operating temperatures.

Advantages

  • Fast access time enhances system performance.
  • Low-power consumption extends battery life in portable devices.
  • Compatibility with existing systems reduces design complexity.
  • Reliable operation in extreme temperature conditions.

Disadvantages

  • Limited memory size (64K) may not be sufficient for certain applications requiring larger storage capacity.
  • 28-pin DIP package may not be suitable for space-constrained designs.

Working Principles

The IDT7164L20YI8 is a static RAM that stores data using flip-flops. It operates by storing binary information in a matrix of memory cells, which can be accessed and manipulated through the various control signals. The chip enable (CE), output enable (OE), and write enable (WE) signals control the read and write operations. The address inputs (A0-A14) specify the location in memory to access, while the data inputs/outputs (DQ0-DQ7) handle the actual data transfer.

Detailed Application Field Plans

The IDT7164L20YI8 is widely used in various electronic systems that require fast and reliable memory storage. Some common application fields include:

  1. Microcontrollers
  2. Embedded systems
  3. Communication devices
  4. Industrial automation
  5. Medical equipment
  6. Automotive electronics

Alternative Models

Here are some alternative models that offer similar functionality:

  1. IDT71256SA15Y: 256K (32K x 8) Static RAM, 15ns Access Time, 28-pin DIP Package.
  2. AT28C64B-15PU: 64K (8K x 8) EEPROM, 150ns Read/Write Cycle Time, 28-pin DIP Package.
  3. CY62256LL-70SNXI: 256K (32K x 8) Low Power SRAM, 70ns Access Time, 28-pin SOIC Package.

These alternative models provide different memory sizes, access times, and technologies to suit specific application requirements.

In conclusion, the IDT7164L20YI8 is a high-performance static RAM that offers fast access time, low-power consumption, and reliable operation. It finds applications in various electronic systems and can be replaced by alternative models with different specifications.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT7164L20YI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT7164L20YI8 in technical solutions:

  1. Question: What is IDT7164L20YI8?
    Answer: IDT7164L20YI8 is a specific model of static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT7164L20YI8?
    Answer: The IDT7164L20YI8 has a capacity of 64 kilobits (KB), which is equivalent to 8 kilobytes (KB).

  3. Question: What is the operating voltage range for IDT7164L20YI8?
    Answer: The operating voltage range for IDT7164L20YI8 is typically between 4.5V and 5.5V.

  4. Question: What is the access time of IDT7164L20YI8?
    Answer: The access time of IDT7164L20YI8 is 200 nanoseconds (ns), meaning it takes approximately 200 ns to read or write data from/to the memory.

  5. Question: Can IDT7164L20YI8 be used in battery-powered devices?
    Answer: Yes, IDT7164L20YI8 can be used in battery-powered devices as long as the operating voltage range is within the power supply capabilities of the device.

  6. Question: Is IDT7164L20YI8 compatible with standard microcontrollers?
    Answer: Yes, IDT7164L20YI8 is compatible with most standard microcontrollers that support SRAM interfacing.

  7. Question: Can IDT7164L20YI8 be used in industrial applications?
    Answer: Yes, IDT7164L20YI8 is suitable for various industrial applications that require reliable and fast memory storage.

  8. Question: Does IDT7164L20YI8 support multiple read/write operations simultaneously?
    Answer: No, IDT7164L20YI8 does not support simultaneous read/write operations. It operates in a single-access mode.

  9. Question: Can IDT7164L20YI8 be used as cache memory in computer systems?
    Answer: Yes, IDT7164L20YI8 can be used as cache memory in computer systems to improve data access speed.

  10. Question: What are some alternative SRAM chips similar to IDT7164L20YI8?
    Answer: Some alternative SRAM chips similar to IDT7164L20YI8 include the CY7C199-15VC, AS6C62256A, and M68AF127BM70N6.