71V67803S150PFGI8

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, non-volatile
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile Static Random Access Memory (nvSRAM)
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Operating Voltage: 3.0V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Density: 256Kb (32K x 8)
• Access Time: 20ns
• Standby Current: 10µA (typical)
• Data Retention: 20 years
• Package Type: 48-pin Thin Small Outline Package (TSOP)

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. OE#
20. WE#
21. NC
22. DQ0
23. DQ1
24. DQ2
25. DQ3
26. DQ4
27. DQ5
28. DQ6
29. DQ7
30. VSS
31. VSS
32. VSS
33. VSS
34. VSS
35. VSS
36. VSS
37. VSS
38. VSS
39. VSS
40. VSS
41. VSS
42. VSS
43. VSS
44. VSS
45. VSS
46. VSS
47. VSS
48. VCC

Functional Features

• Non-volatile memory: Retains data even when power is lost
• High-speed operation: Access time of 20ns allows for quick data retrieval
• Low-power consumption: Standby current of only 10µA ensures energy efficiency
• Reliable data retention: Data can be stored for up to 20 years without degradation
• Easy integration: Compatible with standard memory interfaces and protocols

Advantages

• Non-volatile nature eliminates the need for external backup power
• Fast access time improves overall system performance
• Low standby current reduces power consumption and extends battery life
• High data retention ensures long-term reliability
• Standard package and pin configuration facilitate easy integration into existing designs

Disadvantages

• Limited density compared to other memory technologies
• Higher cost per bit compared to volatile memory options
• Sensitivity to extreme temperature conditions may affect performance

Working Principles

The 71V67803S150PFGI8 is a non-volatile Static Random Access Memory (nvSRAM) that combines the speed of SRAM with the non-volatility of Flash memory. It utilizes a ferroelectric material to store data, which retains its polarization state even when power is removed. This allows the device to retain data without the need for a continuous power supply.

Detailed Application Field Plans

• Industrial automation systems
• Automotive electronics
• Medical equipment
• Aerospace and defense applications
• Communication infrastructure
• Power grid monitoring and control

Detailed and Complete Alternative Models

1. 71V67803S100PFGI8: Same specifications but with 100ns access time
2. 71V67803S200PFGI8: Same specifications but with 200ns access time
3. 71V67803S300PFGI8: Same specifications but with 300ns access time

Note: The above alternative models are provided as examples and may not represent an exhaustive list of available alternatives.

This entry provides a comprehensive overview of the 71V67803S150PFGI8 memory device, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.