71V424S10YG

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory chip
• Characteristics: High-speed, low-power, non-volatile
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile Static Random Access Memory (nvSRAM)
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Memory Size: 4 Megabits (512K x 8)
• Supply Voltage: 3.0V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 20 ns
• Standby Current: 30 µA (typical)
• Data Retention: 20 years

Detailed Pin Configuration

The 71V424S10YG has a total of 44 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. OE#
20. WE#
21. BYTE#
22. NC
23. DQ0
24. DQ1
25. DQ2
26. DQ3
27. DQ4
28. DQ5
29. DQ6
30. DQ7
31. VSS
32. VSS
33. VSS
34. VSS
35. VSS
36. VSS
37. VSS
38. VSS
39. VSS
40. VSS
41. VSS
42. VSS
43. VSS
44. VCC

Functional Features

• Non-volatile memory: Retains data even when power is lost
• High-speed operation: Access time of 20 ns allows for quick data retrieval
• Low-power consumption: Standby current of only 30 µA helps conserve energy
• Byte-write capability: Allows individual bytes to be written without affecting others
• Automatic store on power loss: Ensures data integrity during unexpected power failures

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data retention even in the absence of power - High-speed operation enables fast access to stored data - Low-power consumption helps prolong battery life in portable devices - Byte-write capability provides flexibility in data manipulation

Disadvantages: - Limited memory size (4 Megabits) compared to other memory chips - Relatively higher cost per bit compared to traditional volatile memory - Requires careful handling due to sensitivity to electrostatic discharge (ESD)

Working Principles

The 71V424S10YG is based on non-volatile Static Random Access Memory (nvSRAM) technology. It combines the speed and ease of use of SRAM with the non-volatility of Flash memory. The chip utilizes a specialized circuitry that automatically stores data in non-volatile cells upon power loss, ensuring data integrity.

Detailed Application Field Plans

The 71V424S10YG is commonly used in applications where data integrity is critical, such as: - Industrial control systems - Automotive electronics - Medical equipment - Aerospace and defense systems

Detailed and Complete Alternative Models

1. 71V424S10PHG - Same specifications but with a different package (Plastic Leaded Chip Carrier)
2. 71V424S10YGI - Same specifications but with inverted pin configuration
3. 71V424S10YG8 - Same specifications but with extended temperature range (-40°C to +125°C)

These alternative models provide options for different package types and operating conditions while maintaining the same core functionality.

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