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71V416S15BEI

Encyclopedia Entry: 71V416S15BEI

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V416S15BEI is a high-speed, low-power CMOS static random access memory (SRAM) IC. It is designed for use in various electronic devices and systems that require fast and reliable data storage.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable data retention - Easy integration into existing circuitry

Package: The 71V416S15BEI is available in a standard 44-pin plastic small outline package (SOJ). This package offers excellent thermal performance and ease of handling during assembly.

Essence: The essence of the 71V416S15BEI lies in its ability to provide high-speed and low-power data storage, making it an essential component in modern electronic devices.

Packaging/Quantity: The 71V416S15BEI is typically sold in reels containing 250 units per reel.

Specifications

  • Organization: 4 Meg x 16-bit
  • Operating Voltage: 3.3V
  • Access Time: 15 ns
  • Standby Current: 10 µA (typical)
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention Voltage: 2.0V (min)
  • Package Type: SOJ-44

Detailed Pin Configuration

The 71V416S15BEI has a total of 44 pins. Below is a detailed pin configuration:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. A8
  10. A9
  11. A10
  12. A11
  13. A12
  14. A13
  15. A14
  16. A15
  17. VCC
  18. OE#
  19. WE#
  20. I/O0
  21. I/O1
  22. I/O2
  23. I/O3
  24. I/O4
  25. I/O5
  26. I/O6
  27. I/O7
  28. I/O8
  29. I/O9
  30. I/O10
  31. I/O11
  32. I/O12
  33. I/O13
  34. I/O14
  35. I/O15
  36. GND
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low power consumption ensures energy efficiency in electronic devices.
  • Large storage capacity of 4 Meg x 16-bit provides ample space for data storage needs.
  • Reliable data retention ensures that stored information is preserved over time.
  • Easy integration into existing circuitry simplifies the design and implementation process.

Advantages and Disadvantages

Advantages: - High-speed operation enables fast data access. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Reliable data retention ensures data integrity. - Easy integration simplifies circuit design.

Disadvantages: - Limited compatibility with certain older systems due to its specific pin configuration. - Higher cost compared to lower-capacity SRAM ICs. - Sensitivity to electrostatic discharge (ESD) requires careful handling during assembly.

Working Principles

The 71V416S15BEI operates based on the principles of static random access memory (SRAM). It uses flip-flops to store and retrieve data. When the chip is powered on, the stored data remains intact until overwritten or erased. The access time of 15 ns ensures fast retrieval of data when requested by the system.

Detailed Application Field Plans

The 71V416S15BEI finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Consumer electronics - Automotive electronics - Industrial control systems

Its high-speed operation, low power consumption, and large storage capacity make it suitable for applications that require quick and reliable data storage.

Detailed and Complete Alternative Models

  1. 71V416L10PH - 4 Meg x 16-bit CMOS SRAM, 10 ns access time, 3.3V operating voltage.
  2. 71V416Y10PH - 4 Meg x 16-bit CMOS SRAM, 10 ns access time, 5V operating voltage.
  3. 71V416S12PH - 4 Meg x 16-bit CMOS SRAM, 12 ns access time

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 71V416S15BEI v technických řešeních

Sure! Here are 10 common questions and answers related to the application of 71V416S15BEI in technical solutions:

  1. Q: What is the 71V416S15BEI? A: The 71V416S15BEI is a specific model of synchronous static RAM (SRAM) integrated circuit.

  2. Q: What is the capacity of the 71V416S15BEI? A: The 71V416S15BEI has a capacity of 4 megabits (4Mbit) or 512 kilobytes (512KB).

  3. Q: What is the operating voltage range for the 71V416S15BEI? A: The 71V416S15BEI operates within a voltage range of 3.0V to 3.6V.

  4. Q: What is the access time of the 71V416S15BEI? A: The 71V416S15BEI has an access time of 15 nanoseconds (ns).

  5. Q: Can the 71V416S15BEI be used in battery-powered devices? A: Yes, the 71V416S15BEI can be used in battery-powered devices as it operates within a low voltage range.

  6. Q: Does the 71V416S15BEI support multiple read and write operations simultaneously? A: Yes, the 71V416S15BEI supports simultaneous multiple read and write operations.

  7. Q: Is the 71V416S15BEI compatible with various microcontrollers and processors? A: Yes, the 71V416S15BEI is compatible with a wide range of microcontrollers and processors.

  8. Q: Can the 71V416S15BEI be used in industrial applications? A: Yes, the 71V416S15BEI is suitable for use in industrial applications due to its robust design and reliability.

  9. Q: Does the 71V416S15BEI have built-in error correction capabilities? A: No, the 71V416S15BEI does not have built-in error correction capabilities.

  10. Q: What are some typical applications of the 71V416S15BEI? A: The 71V416S15BEI is commonly used in networking equipment, telecommunications devices, automotive systems, and other embedded applications.

Please note that these answers are general and may vary depending on specific implementation requirements.