Encyclopedia Entry: 71V416S10BEG8

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V416S10BEG8 is a high-speed, low-power CMOS static random access memory (SRAM) IC. It is designed for use in various electronic devices and systems that require fast and reliable data storage.

Characteristics: This IC offers a capacity of 4 Megabits (4M) organized as 512K words by 8 bits. It operates on a single power supply voltage of 3.3V and has a fast access time of 10 nanoseconds (ns). The 71V416S10BEG8 features a low standby current and automatic power-down mode to conserve energy when not in use.

Package: The 71V416S10BEG8 is available in a 32-pin plastic small outline integrated circuit (SOIC) package. This package provides protection and easy integration into circuit boards.

Essence: The essence of the 71V416S10BEG8 lies in its ability to provide high-speed and reliable data storage in a compact form factor. Its low-power characteristics make it suitable for battery-powered devices.

Packaging/Quantity: The 71V416S10BEG8 is typically sold in reels or tubes containing multiple units. The exact quantity may vary depending on the supplier.

Specifications

• Capacity: 4 Megabits (512K words x 8 bits)
• Supply Voltage: 3.3V
• Access Time: 10 ns
• Standby Current: Low
• Power-Down Mode: Automatic
• Package Type: 32-pin SOIC

Detailed Pin Configuration

The 71V416S10BEG8 has a total of 32 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. I/O0
11. I/O1
12. I/O2
13. I/O3
14. I/O4
15. I/O5
16. I/O6
17. I/O7
18. CE1
19. CE2
20. WE
21. OE
22. LB
23. UB
24. NC
25. GND
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• High-speed operation for quick data access.
• Low-power consumption for energy efficiency.
• Automatic power-down mode to conserve power when idle.
• Reliable data storage with a capacity of 4 Megabits.
• Single power supply voltage simplifies integration into various systems.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data retrieval. - Low standby current prolongs battery life in portable devices. - Compact package size facilitates easy integration into circuit boards. - Reliable data storage ensures data integrity.

Disadvantages: - Limited capacity compared to higher-density memory options. - Higher cost per bit compared to larger memory ICs.

Working Principles

The 71V416S10BEG8 operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain information as long as power is supplied. The IC uses an address bus to select specific memory locations and a data bus for reading from or writing to those locations. The control pins (CE1, CE2, WE, OE) manage the memory operations.

Detailed Application Field Plans

The 71V416S10BEG8 can be used in various applications, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Consumer electronics - Industrial control systems

Detailed and Complete Alternative Models

1. 71V416L10PHG - Similar to the 71V416S10BEG8, but operates at a lower voltage of 2.5V.
2. 71V416Y10PHG - Offers the same capacity and characteristics as the 71V416S10BEG8 but comes in a different package (44-pin TSOP).

These alternative models provide options with slightly different specifications or package types, allowing for flexibility in design and integration.

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