Encyclopedia Entry: 71V416L12PHGI8

Product Overview

Category

The 71V416L12PHGI8 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable operation

Package

The 71V416L12PHGI8 is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information efficiently and reliably.

Packaging/Quantity

The 71V416L12PHGI8 is typically packaged individually and is available in various quantities depending on the customer's requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 4 Megabits (4Mbit)
• Organization: 512K words x 8 bits
• Supply Voltage: 3.3V
• Access Time: 12 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Package Type: Plastic Small Outline J-lead (SOJ)

Detailed Pin Configuration

The 71V416L12PHGI8 has a total of 32 pins, which are assigned specific functions as follows:

1. Vcc - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ7 - Data inputs/outputs
4. CE1, CE2 - Chip enable inputs
5. OE - Output enable input
6. WE - Write enable input
7. UB, LB - Byte control inputs
8. NC - No connection (unused pin)
9. GND - Ground

Functional Features

• High-speed access and data transfer
• Non-volatile storage (retains data even when power is removed)
• Low power consumption
• Easy integration into electronic systems
• Compatibility with various microcontrollers and processors

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval
• Large storage capacity accommodates extensive data requirements
• Low power consumption prolongs battery life in portable devices
• Reliable operation ensures data integrity
• Versatile compatibility with different electronic systems

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity
• Susceptible to data loss in case of power failure without proper backup measures

Working Principles

The 71V416L12PHGI8 operates based on the principles of static random access memory (SRAM). It utilizes flip-flop circuits to store and retrieve data. When powered, the memory cells retain their contents as long as the power supply remains stable. The address inputs are used to select specific memory locations, while the control inputs enable reading or writing operations.

Detailed Application Field Plans

The 71V416L12PHGI8 finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial automation systems - Consumer electronics

Detailed and Complete Alternative Models

1. 71V416L10PHGI8: Similar to the 71V416L12PHGI8, but with a slightly lower access time of 10ns.
2. 71V416S10PHGI8: A lower-power variant with an access time of 10ns and reduced standby current.
3. 71V416S12PHGI8: Another low-power option with an access time of 12ns and improved power-saving features.

These alternative models offer similar functionality and can be considered based on specific application requirements.

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