Encyclopedia Entry: 71V416L12BEI8

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V416L12BEI8 is a high-speed, low-power, 4-megabit (4M x 16-bit) CMOS static random access memory (SRAM) IC. It is designed for use in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable data retention - Easy integration into electronic circuits

Package: The 71V416L12BEI8 is available in a standard 48-pin plastic TSOP (Thin Small Outline Package) with a body width of 12.8mm.

Essence: This IC serves as a crucial component in electronic devices by providing fast and non-volatile storage capabilities.

Packaging/Quantity: The 71V416L12BEI8 is typically sold in reels or trays, with each reel containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the manufacturer and supplier.

Specifications

• Organization: 4M x 16 bits
• Supply Voltage: 3.3V ± 0.3V
• Access Time: 12ns (max)
• Standby Current: 10μA (typ)
• Operating Temperature Range: -40°C to +85°C
• Data Retention Voltage: 2.0V (min)

Detailed Pin Configuration

The 71V416L12BEI8 features a total of 48 pins, each serving a specific function. Here is a brief overview of the pin configuration:

1. VCC - Power supply voltage
2. GND - Ground reference
3. A0-A21 - Address inputs
4. DQ0-DQ15 - Data inputs/outputs
5. WE - Write Enable
6. OE - Output Enable
7. CE1, CE2 - Chip Enable inputs
8. UB, LB - Upper and Lower Byte Enable inputs

Please refer to the datasheet for a complete pin configuration diagram.

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient energy usage in electronic devices.
• Large storage capacity of 4 megabits provides ample space for data storage.
• Reliable data retention ensures that stored information remains intact over time.
• Easy integration into electronic circuits due to its standard package and pin configuration.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Reliable data retention ensures data integrity. - Easy integration simplifies circuit design and manufacturing processes.

Disadvantages: - Limited compatibility with certain older systems or devices. - Higher cost compared to lower-capacity SRAM ICs. - Sensitivity to electrostatic discharge (ESD) requires careful handling during installation and maintenance.

Working Principles

The 71V416L12BEI8 operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store and retrieve data, allowing for fast read and write operations. The IC is designed to retain data as long as power is supplied to it, making it suitable for applications where non-volatile storage is not required.

Detailed Application Field Plans

The 71V416L12BEI8 finds application in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Consumer electronics - Automotive electronics - Industrial control systems

Its high-speed operation, low power consumption, and large storage capacity make it suitable for applications that require fast and reliable data storage and retrieval.

Detailed and Complete Alternative Models

• 71V416L10BEI8: Similar to the 71V416L12BEI8 but with a slightly lower access time of 10ns.
• 71V416S10PHG: A 4-megabit SRAM IC with a different pin configuration and package type (SOJ).
• 71V416S15PHG: Another alternative with a higher access time of 15ns but a smaller package size (TSOP II).

These alternative models offer similar functionality and can be considered as substitutes depending on specific requirements and constraints.

Word count: 570 words