Encyclopedia Entry: 71V416L10YGI8

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V416L10YGI8 is a high-speed, low-power CMOS static random access memory (SRAM) chip. It is commonly used in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Easy integration into existing circuitry - Reliable data retention

Package: The 71V416L10YGI8 is available in a compact yet durable plastic package, which protects the IC from external elements and provides mechanical support during handling and installation.

Essence: This SRAM chip serves as a crucial component in electronic devices, enabling efficient data storage and quick access to information.

Packaging/Quantity: The 71V416L10YGI8 is typically sold in reels or trays, with each reel containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Size: 4 Megabits (4Mbit)
• Organization: 512K words x 8 bits
• Supply Voltage: 3.3V
• Access Time: 10 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 10 years

Detailed Pin Configuration

The 71V416L10YGI8 features a standard pin configuration, as follows:

1. Chip Enable (/CE)
2. Output Enable (/OE)
3. Write Enable (/WE)
4. Address Inputs (A0-A18)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (Vcc)
7. Ground (GND)

Functional Features

• High-speed operation allows for rapid data access and retrieval.
• Low power consumption ensures energy efficiency in electronic devices.
• Large storage capacity accommodates a significant amount of data.
• Easy integration into existing circuitry simplifies the design process.
• Reliable data retention ensures long-term storage without loss or corruption.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity meets the demands of data-intensive applications. - Easy integration reduces development time and cost. - Reliable data retention ensures data integrity over extended periods.

Disadvantages: - Limited compatibility with certain older systems due to voltage requirements. - Higher cost compared to alternative memory technologies. - Susceptible to electromagnetic interference (EMI) in certain environments.

Working Principles

The 71V416L10YGI8 operates based on the principles of static random access memory (SRAM). It utilizes flip-flop circuits to store and retrieve data. When powered, the chip maintains the stored information as long as the power supply remains stable. The address inputs are used to select specific memory locations, while the control signals (CE, OE, WE) determine read or write operations.

Detailed Application Field Plans

The 71V416L10YGI8 finds application in various fields, including: 1. Computer Systems: Used as cache memory in high-performance computers to improve data access speed. 2. Networking Equipment: Enables fast data buffering and packet processing in routers and switches. 3. Consumer Electronics: Provides data storage capabilities in smartphones, tablets, and gaming consoles. 4. Automotive Electronics: Utilized in automotive control units for storing critical data and firmware. 5. Industrial Automation: Supports data storage and processing in programmable logic controllers (PLCs) and industrial control systems.

Detailed and Complete Alternative Models

1. 71V416S10PHG8: Similar to the 71V416L10YGI8, but operates at a lower voltage (2.5V).
2. 71V416S10YGI8: Offers the same specifications as the 71V416L10YGI8 but comes in a different package.
3. 71V416L12PHG8: Provides a higher access time of 12ns for applications that can tolerate slightly slower performance.

These alternative models offer similar functionality and can be considered based on specific requirements and compatibility with existing systems.

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