71V3577S75BGG8

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory chip
• Characteristics: High-speed, low-power consumption
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Single chip, available in various package sizes

Specifications

• Memory Type: Flash
• Memory Size: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 ns
• Interface: Parallel
• Data Retention: 20 years

Detailed Pin Configuration

The 71V3577S75BGG8 has a total of 48 pins arranged as follows:

Pin Name Description 1 A0-A18 Address Inputs 2 CE# Chip Enable Input 3 OE# Output Enable Input 4 WE# Write Enable Input 5 I/O0 Data Input/Output 6 I/O1 Data Input/Output ... 47 VCC Power Supply 48 GND Ground

Functional Features

• High-speed operation allows for quick data access and transfer.
• Low-power consumption ensures efficient energy usage.
• Non-volatile memory retains data even when power is disconnected.
• Easy integration into existing circuit designs due to its parallel interface.

Advantages

• Fast access time enables rapid data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile memory eliminates the need for constant data backup.
• Compatibility with parallel interfaces simplifies integration.

Disadvantages

• Limited memory size may not be sufficient for certain applications.
• Parallel interface may require additional circuitry for compatibility with modern systems.
• Higher cost compared to other memory technologies with similar capacities.

Working Principles

The 71V3577S75BGG8 is based on flash memory technology, which utilizes floating-gate transistors to store data. When data is written, an electrical charge is trapped in the floating gate, representing a binary value. This charge can be retained for an extended period without power, making it non-volatile. During read operations, the stored charges are sensed and converted back into digital data.

Detailed Application Field Plans

The 71V3577S75BGG8 is commonly used in various electronic devices that require non-volatile memory storage, such as: - Embedded systems - Consumer electronics - Automotive applications - Industrial control systems

Detailed and Complete Alternative Models

• 71V3577S75BFG8: Similar specifications but available in a different package (TSOP)
• 71V3577S75BEG8: Same specifications but operates at a lower voltage range (1.8V - 3.6V)
• 71V3577S75BHG8: Higher capacity version with 8 Megabits (1 Megabyte) of memory

Note: The above alternative models are provided for reference and may have slight variations in features and pin configurations.

This entry provides an overview of the 71V3577S75BGG8 memory chip, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.